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S2B-HE3/52T PDF预览

S2B-HE3/52T

更新时间: 2024-11-18 15:50:19
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 82K
描述
DIODE 1.5 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN, Rectifier Diode

S2B-HE3/52T 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-214AA
包装说明:ROHS COMPLIANT, PLASTIC, SMB, 2 PIN针数:2
Reach Compliance Code:unknown风险等级:5.56
Base Number Matches:1

S2B-HE3/52T 数据手册

 浏览型号S2B-HE3/52T的Datasheet PDF文件第2页浏览型号S2B-HE3/52T的Datasheet PDF文件第3页浏览型号S2B-HE3/52T的Datasheet PDF文件第4页 
S2A thru S2M  
Vishay General Semiconductor  
www.vishay.com  
Surface Mount Glass Passivated Rectifier  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Glass passivated chip junction  
• Low forward voltage drop  
• Low leakage current  
• High forward surge capability  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
DO-214AA (SMB)  
• AEC-Q101 qualified  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
TYPICAL APPLICATIONS  
For use in general purpose rectification of power supplies,  
inverters, converters and freewheeling diodes for consumer,  
automotive and telecommunication.  
PRIMARY CHARACTERISTICS  
IF(AV)  
1.5 A  
VRRM  
IFSM  
IR  
50 V to 1000 V  
50 A  
MECHANICAL DATA  
Case: DO-214AA (SMB)  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS compliant, commercial grade  
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified  
1.0 μA  
VF  
1.15 V  
TJ max.  
150 °C  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix  
meets JESD 201 class 2 whisker test  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL S2A  
S2B  
SB  
S2D  
SD  
S2G  
SG  
S2J  
SJ  
S2K  
SK  
S2M UNIT  
Device marking code  
SA  
SM  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
Maximum DC blocking voltage  
VDC  
100  
400  
1.5  
1000  
V
A
Maximum average forward rectified current at TL= 100 °C  
IF(AV)  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
50  
A
Operating and storage temperature range  
TJ, TSTG  
- 55 to + 150  
°C  
Revision: 22-Mar-12  
Document Number: 88712  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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