Datasheet > S2B-HE3/5BT

S2B-HE3/5BT

更新时间： 2024-11-18 15:50:19

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	82K
描述
DIODE 1.5 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN, Rectifier Diode

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

S2B-HE3/5BT 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	DO-214AA
包装说明：	ROHS COMPLIANT, PLASTIC, SMB, 2 PIN	针数：	2
Reach Compliance Code：	unknown	风险等级：	5.56
Base Number Matches：	1

S2B-HE3/5BT 数据手册

S2A thru S2M

Vishay General Semiconductor

www.vishay.com

Surface Mount Glass Passivated Rectifier

FEATURES

• Low profile package

• Ideal for automated placement

• Glass passivated chip junction

• Low forward voltage drop

• Low leakage current

• High forward surge capability

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

DO-214AA (SMB)

• AEC-Q101 qualified

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

For use in general purpose rectification of power supplies,

inverters, converters and freewheeling diodes for consumer,

automotive and telecommunication.

PRIMARY CHARACTERISTICS

I_F(AV)

1.5 A

V_RRM

I_FSM

I_R

50 V to 1000 V

50 A

MECHANICAL DATA

Case: DO-214AA (SMB)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS compliant, commercial grade

Base P/NHE3 - RoHS compliant, AEC-Q101 qualified

1.0 μA

V_F

1.15 V

T_Jmax.

150 °C

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix

meets JESD 201 class 2 whisker test

Polarity: Color band denotes cathode end

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL S2A

S2B

S2D

S2G

S2J

S2K

S2M UNIT

Device marking code

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

100

200

140

200

400

280

600

420

600

800

560

800

1000

700

Maximum DC blocking voltage

V_DC

100

400

1.5

1000

Maximum average forward rectified current at T_L= 100 °C

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

Operating and storage temperature range

T_J, T_STG

- 55 to + 150

°C

Revision: 22-Mar-12

Document Number: 88712

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4

中文翻译

下载PDF

与S2B-HE3/5BT相关器件

型号	品牌	获取价格	描述	数据表
S2BHE3_A/H	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 100V V(RRM), Silicon, DO-214AA, SMB, 2 PIN
S2BHE3_A/I	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 100V V(RRM), Silicon, DO-214AA, SMB, 2 PIN
S2BL	HOTTECH	获取价格	SOD-123FL
S2B-L	MCC	获取价格	1.5 Amp Glass Passivated Silicon Rectifier 50 to 1000 Volts
S2B-LT	MCC	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 100V V(RRM), Silicon, DO-214AA, DO-214AA, SMBJ,
S2B-LTP	MCC	获取价格	1.5A, 100V, SILICON, RECTIFIER DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN
S2B-L-TP	MCC	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 100V V(RRM), Silicon, DO-214AA, ROHS COMPLIANT,
S2B-L-TP-HF	MCC	获取价格	RECTIFIER DIODE
S2B-LTP-HF	MCC	获取价格	Rectifier Diode, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-214AA, SMB, 2 PIN
S2B-M3	VISHAY	获取价格	Glass passivated pellet chip junction

与S2B-HE3/5BT相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

17
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

12
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

42
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

36

产品中心

服务支持

精选活动

关于我们

帮助中心

S2B-HE3/5BT

S2B-HE3/5BT 技术参数

S2B-HE3/5BT 数据手册

与S2B-HE3/5BT相关器件

与S2B-HE3/5BT相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

S2B-HE3/5BT

S2B-HE3/5BT 技术参数

S2B-HE3/5BT 数据手册

与S2B-HE3/5BT相关器件

与S2B-HE3/5BT相关文章

您还可以找

您在本页遇到什么问题？