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S29WS256N0LBAI013 PDF预览

S29WS256N0LBAI013

更新时间： 2022-11-26 01:20:49
品牌 Logo 应用领域
飞索 - SPANSION 闪存
页数 文件大小 规格书
99页 921K
描述
256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY

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S29WS256N0LBAI013 数据手册

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S29WS-N MirrorBit™ Flash Family  
S29WS256N, S29WS128N, S29WS064N  
256/128/64 Megabit (16/8/4 M x 16-Bit) CMOS 1.8 Volt-only  
Simultaneous Read/Write, Burst Mode Flash Memory  
ADVANCE  
INFORMATION  
Data Sheet  
General Description  
The Spansion S29WS256/128/064N are MirrorbitTM Flash products fabricated on 110 nm process technology. These burst  
mode Flash devices are capable of performing simultaneous read and write operations with zero latency on two separate  
banks using separate data and address pins. These products can operate up to 80 MHz and use a single VCC of  
1.7 V to 1.95 V that makes them ideal for today’s demanding wireless applications requiring higher density, better per-  
formance and lowered power consumption.  
Distinctive Characteristics  
„
„
„
Single 1.8 V read/program/erase (1.70–1.95 V)  
„
„
Command set compatible with JEDEC (42.4)  
standard  
110 nm MirrorBit™ Technology  
Hardware (WP#) protection of top and bottom  
sectors  
Simultaneous Read/Write operation with zero  
latency  
„
„
32-word Write Buffer  
„
„
Dual boot sector configuration (top and bottom)  
Sixteen-bank architecture consisting of 16/8/4  
Mwords for WS256N/128N/064N, respectively  
Offered Packages  
— WS064N: 80-ball FBGA (7 mm x 9 mm)  
— WS256N/128N: 84-ball FBGA (8 mm x 11.6 mm)  
„
„
„
Four 16 Kword sectors at both top and bottom of  
memory array  
„
„
Low VCC write inhibit  
254/126/62 64 Kword sectors (WS256N/128N/  
064N)  
Persistent and Password methods of Advanced  
Sector Protection  
Programmable burst read modes  
„
Write operation status bits indicate program and  
erase operation completion  
— Linear for 32, 16 or 8 words linear read with or  
without wrap-around  
„
„
„
Suspend and Resume commands for Program and  
Erase operations  
— Continuous sequential read mode  
„
SecSi™ (Secured Silicon) Sector region consisting  
of 128 words each for factory and customer  
Unlock Bypass program command to reduce  
programming time  
„
„
20-year data retention (typical)  
Synchronous or Asynchronous program operation,  
independent of burst control register settings  
Cycling Endurance: 100,000 cycles per sector  
(typical)  
„
„
„
ACC input pin to reduce factory programming time  
Support for Common Flash Interface (CFI)  
„
RDY output indicates data available to system  
Industrial Temperature range (contact factory)  
Performance Characteristics  
Read Access Times  
Current Consumption (typical values)  
Speed Option (MHz)  
Max. Synch. Latency, ns (tIACC  
Max. Synch. Burst Access, ns (tBACC  
Max. Asynch. Access Time, ns (tACC  
Max CE# Access Time, ns (tCE  
Max OE# Access Time, ns (tOE  
80  
80  
66  
80  
54  
80  
Continuous Burst Read @ 66 MHz  
35 mA  
50 mA  
19 mA  
19 mA  
20 µA  
)
Simultaneous Operation (asynchronous)  
Program (asynchronous)  
)
9
11.2  
80  
13.5  
80  
)
80  
Erase (asynchronous)  
)
80  
80  
80  
Standby Mode (asynchronous)  
)
13.5  
13.5  
13.5  
Typical Program & Erase Times  
Single Word Programming  
40 µs  
9.4 µs  
6 µs  
Effective Write Buffer Programming (VCC) Per Word  
Effective Write Buffer Programming (VACC) Per Word  
Sector Erase (16 Kword Sector)  
150 ms  
600 ms  
Sector Erase (64 Kword Sector)  
Publication Number S29WS-N_00 Revision G Amendment 0 Issue Date January 25, 2005  
1234567...99

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S29WS256N0LBAW010 CYPRESS

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 		Flash, 16MX16, 70ns, PBGA84, 11.60 X 8 MM, LEAD FREE, PLASTIC, FBGA-84
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 		256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
S29WS256N0LBAW012 SPANSION

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 		256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
S29WS256N0LBAW012 CYPRESS

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 		Flash, 16MX16, 70ns, PBGA84, 11.60 X 8 MM, LEAD FREE, PLASTIC, FBGA-84
S29WS256N0LBAW013 SPANSION

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 		256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY

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