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S29WS256N0LBAW012 PDF预览

S29WS256N0LBAW012

更新时间: 2024-02-02 09:40:04
品牌 Logo 应用领域
飞索 - SPANSION 闪存
页数 文件大小 规格书
99页 921K
描述
256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY

S29WS256N0LBAW012 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:BGA
包装说明:VFBGA, BGA84,10X12,32针数:84
Reach Compliance Code:compliantECCN代码:3A991.B.1.A
HTS代码:8542.32.00.51风险等级:5.73
最长访问时间:70 ns其他特性:SYNCHRONOUS BURST MODE OPERATION POSSIBLE
启动块:BOTTOM/TOP命令用户界面:YES
通用闪存接口:YES数据轮询:YES
JESD-30 代码:R-PBGA-B84JESD-609代码:e1
长度:11.6 mm内存密度:268435456 bit
内存集成电路类型:FLASH内存宽度:16
湿度敏感等级:3功能数量:1
部门数/规模:8,254端子数量:84
字数:16777216 words字数代码:16000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-25 °C组织:16MX16
封装主体材料:PLASTIC/EPOXY封装代码:VFBGA
封装等效代码:BGA84,10X12,32封装形状:RECTANGULAR
封装形式:GRID ARRAY, VERY THIN PROFILE, FINE PITCH并行/串行:PARALLEL
峰值回流温度(摄氏度):260电源:1.8 V
编程电压:1.8 V认证状态:Not Qualified
座面最大高度:1 mm部门规模:16K,64K
最大待机电流:0.000005 A子类别:Flash Memories
最大压摆率:0.054 mA最大供电电压 (Vsup):1.95 V
最小供电电压 (Vsup):1.7 V标称供电电压 (Vsup):1.8 V
表面贴装:YES技术:CMOS
温度等级:OTHER端子面层:TIN SILVER COPPER
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:40
切换位:YES类型:NOR TYPE
宽度:8 mmBase Number Matches:1

S29WS256N0LBAW012 数据手册

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ADVANCE  
INFORMATION  
S29WS-N MirrorBit™ Flash Family  
S29WS256N, S29WS128N, S29WS064N  
256/128/64 Megabit (16/8/4 M x 16-Bit) CMOS 1.8 Volt-only  
Simultaneous Read/Write, Burst Mode Flash Memory  
Data Sheet  
Notice to Readers: The Advance Information status indicates that this  
document contains information on one or more products under development  
at Spansion LLC. The information is intended to help you evaluate this product.  
Do not design in this product without contacting the factory. Spansion LLC  
reserves the right to change or discontinue work on this proposed product  
without notice.  
Publication Number S29WS-N_00 Revision G Amendment 0 Issue Date January 25, 2005  

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