5秒后页面跳转
S29WS064RABBHI013 PDF预览

S29WS064RABBHI013

更新时间: 2023-07-15 00:00:00
品牌 Logo 应用领域
赛普拉斯 - CYPRESS /
页数 文件大小 规格书
83页 2362K
描述
Flash, 4MX16, 80ns, PBGA84, 11.60 X 8 MM, HALOGEN FREE AND LEAD FREE, FPBGA-84

S29WS064RABBHI013 数据手册

 浏览型号S29WS064RABBHI013的Datasheet PDF文件第1页浏览型号S29WS064RABBHI013的Datasheet PDF文件第2页浏览型号S29WS064RABBHI013的Datasheet PDF文件第4页浏览型号S29WS064RABBHI013的Datasheet PDF文件第5页浏览型号S29WS064RABBHI013的Datasheet PDF文件第6页浏览型号S29WS064RABBHI013的Datasheet PDF文件第7页 
S29WS064R  
64 Megabit (4M x 16-bit), CMOS 1.8 Volt-only  
Simultaneous Read/Write, Burst-mode MirrorBit® Flash Memory  
Data Sheet (Advance Information)  
Distinctive Characteristics  
Single 1.8-Volt read, program and erase (1.70V - 1.95V)  
65 nm MirrorBit process technology  
Command set compatible with JEDEC (42.4) standard  
Dynamic Protection Bit (DYB)  
– A command sector protection method to lock combinations of  
individual sectors to prevent program or erase operations within that  
sector  
VersatileIO™ Feature  
– Device generates data output voltages and tolerates data input  
voltages as determined by the voltage on the V pin  
– 1.8 V compatible I/O signals  
IO  
– Sectors can be locked and unlocked in-system at V level  
CC  
Hardware Sector Protection  
Simultaneous Read/Write operation  
– All sectors locked when ACC input is V  
IL  
– Data can be continuously read from one bank while executing  
erase/program functions in other bank  
– Low V write inhibit  
CC  
Handshaking feature  
– Zero latency between read and write operations  
– Provides host system with minimum possible latency by monitoring  
RDY  
Burst length  
– Continuous linear burst  
Supports Common Flash Memory Interface (CFI)  
Cycling Endurance: 100,000 cycles per sector (typical)  
Data retention: 10 years (typical)  
– 8-word/16-word linear burst with wrap around  
Asynchronous Page Mode  
– 8-word page  
– Page access time of 20 ns  
Data# Polling and toggle bits  
– Provides a software method of detecting program and erase  
operation completion  
32-word write buffer reduces overall programming time for  
multiple-word updates  
Sector Architecture  
Suspend and Resume commands for Program and Erase  
operations  
– Four 8-Kword sectors in upper most address range  
– One hundred twenty seven 32-Kwords sectors  
– Four banks  
Synchronous or Asynchronous program operation,  
independent of burst control register settings  
Top or Bottom boot sector configuration  
ACC input pin to reduce factory programming time  
Secured Silicon Sector region  
Offered Packages  
– 256 words accessible through a command sequence, 128 words for  
the Factory Secured Silicon Sector and 128 words for the Customer  
Secured Silicon Sector  
– 84-ball FBGA (8 mm x 11.6 mm)  
Publication Number S29WS064R_00  
Revision 03  
Issue Date September 30, 2010  
This document contains information on one or more products under development at Spansion Inc. The information is intended to help you evaluate this product. Do not design in  
this product without contacting the factory. Spansion Inc. reserves the right to change or discontinue work on this proposed product without notice.  

与S29WS064RABBHI013相关器件

型号 品牌 描述 获取价格 数据表
S29WS064RABBHW000 CYPRESS Flash, 4MX16, 80ns, PBGA84, 11.60 X 8 MM, LEAD FREE, FBGA-84

获取价格

S29WS064RABBHW010 CYPRESS Flash, 4MX16, 80ns, PBGA84, 11.60 X 8 MM, LEAD FREE, FBGA-84

获取价格

S29WS128J SPANSION 128/64 Megabit (8/4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Fla

获取价格

S29WS128J0PBAI010 SPANSION Flash, 8MX16, 55ns, PBGA84, 8 X 11.60 MM, FBGA-84

获取价格

S29WS128J0PBAI02 SPANSION Flash, 8MX16, 55ns, PBGA84, 8 X 11.60 MM, FBGA-84

获取价格

S29WS128J0PBAI10 SPANSION 128/64 Megabit (8/4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Fla

获取价格