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S29WS128J0PBAI11

更新时间： 2024-01-11 10:28:44
品牌 Logo 应用领域
飞索 - SPANSION 闪存
页数 文件大小 规格书
97页 2391K
描述
128/64 Megabit (8/4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory

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S29WS128J0PBAI11 技术参数

生命周期：Obsolete零件包装代码：BGA
包装说明：8 X 11.60 MM, LEAD FREE, FBGA-84针数：84
Reach Compliance Code：unknownECCN代码：3A991.B.1.A
HTS代码：8542.32.00.51风险等级：5.73
最长访问时间：55 ns其他特性：SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
启动块：BOTTOM/TOPJESD-30 代码：R-PBGA-B84
长度：11.6 mm内存密度：134217728 bit
内存集成电路类型：FLASH内存宽度：16
功能数量：1端子数量：84
字数：8388608 words字数代码：8000000
工作模式：ASYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：8MX16
封装主体材料：PLASTIC/EPOXY封装代码：VFBGA
封装形状：RECTANGULAR封装形式：GRID ARRAY, VERY THIN PROFILE, FINE PITCH
并行/串行：PARALLEL编程电压：1.8 V
认证状态：Not Qualified座面最大高度：1 mm
最大供电电压 (Vsup)：1.95 V最小供电电压 (Vsup)：1.65 V
标称供电电压 (Vsup)：1.8 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子形式：BALL端子节距：0.8 mm
端子位置：BOTTOM类型：NOR TYPE
宽度：8 mmBase Number Matches：1

S29WS128J0PBAI11 数据手册

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S29WS128J/064J  
128/64 Megabit (8/4 M x 16-Bit)  
CMOS 1.8 Volt-only Simultaneous Read/Write,  
Burst Mode Flash Memory  
Data Sheet  
Distinctive Characteristics  
Architectural Advantages  
Hardware Features  
„
Single 1.8 volt read, program and erase (1.65 to  
1.95 volt)  
„
„
„
Handshaking feature available  
— Provides host system with minimum possible latency  
by monitoring RDY  
„
„
Manufactured on 0.11 µm process technology  
Hardware reset input (RESET#)  
— Hardware method to reset the device for reading  
array data  
Simultaneous Read/Write operation  
— Data can be continuously read from one bank while  
executing erase/program functions in other bank  
— Zero latency between read and write operations  
— Four bank architecture: WS128J: 16Mb/48Mb/48Mb/  
16Mb, WS064J: 8Mb/24Mb/24Mb/8Mb  
WP# input  
— Write protect (WP#) function allows protection of  
four outermost boot sectors, regardless of sector  
protect status  
„
Programable Burst Interface  
„
Persistent Sector Protection  
— 2 Modes of Burst Read Operation  
— Linear Burst: 8, 16, and 32 words with wrap-around  
— Continuous Sequential Burst  
— A command sector protection method to lock  
combinations of individual sectors and sector groups  
to prevent program or erase operations within that  
sector  
„
„
Secured Silicon Sector region  
— 128 words accessible through a command sequence,  
64words for the Factory Secured Silicon Sector and  
64words for the Customer Secured Silicon Sector.  
Sector Architecture  
4 Kword x 16 boot sectors, eight at the top of the address  
range, and eight at the bottom of the address range  
— Sectors can be locked and unlocked in-system at VCC  
level  
„
„
Password Sector Protection  
— A sophisticated sector protection method to lock  
combinations of individual sectors and sector groups  
to prevent program or erase operations within that  
sector using a user-defined 64-bit password  
— WS128J: 4 Kword X 16, 32 Kword x 254 sectors  
Bank A : 4 Kword x 8, 32 Kword x 31 sectors  
ACC input: Acceleration function reduces  
programming time; all sectors locked when ACC =  
VIL  
Bank B : 32 Kword x 96 sectors  
Bank C : 32 Kword x 96 sectors  
Bank D : 4 Kword x 8, 32 Kword x 31 sectors  
„
„
CMOS compatible inputs, CMOS compatible outputs  
Low VCC write inhibit  
— WS064J: 4 Kword x 16, 32 Kword x 126 sectors.  
Bank A : 4 Kword x 8, 32 Kword x 15 sectors  
Software Features  
Bank B : 32 Kword x 48 sectors  
„
Supports Common Flash Memory Interface (CFI)  
Bank C : 32 Kword x 48 sectors  
Bank D : 4 Kword x 8, 32 Kword x 15 sectors  
„
Software command set compatible with JEDEC  
42.4 standards  
— Backwards compatible with Am29BDS, Am29BDD,  
Am29BL, and MBM29BS families  
„
„
„
WS128J : 84-ball (8 mm x 11.6 mm) FBGA package,  
WS064J : 80-ball (7 mm x 9 mm) FBGA package  
Cyclling Endurance : 1,000,000 cycles per sector  
typical  
„
„
Data# Polling and toggle bits  
— Provides a software method of detecting program  
and erase operation completion  
Data retention : 20-years typical  
Erase Suspend/Resume  
— Suspends an erase operation to read data from, or  
program data to, a sector that is not being erased,  
then resumes the erase operation  
Performance Characteristics  
„
Read access times at 80/66 MHz  
— Synchronous latency of 71/56 ns (at 30 pF)  
„
Unlock Bypass Program command  
— Reduces overall programming time when issuing  
multiple program command sequences  
— Asynchronous random access times of 55/55 ns (at  
30 pF)  
„
Power dissipation (typical values, CL = 30 pF)  
— Burst Mode Read: 18 mA @ 80Mhz  
— Simultaneous Operation: 60 mA @ 80Mhz  
— Program/Erase: 15 mA  
— Standby mode: 0.2 µA  
Publication Number S29WS-J_00 Revision A Amendment 6 Issue Date May 11, 2006  
This document states the current technical specifications regarding the Spansion product(s) described herein. Spansion LLC deems the products to have been in sufficient  
production volume such that subsequent versions of this document are not expected to change. However, typographical or specification corrections, or modifications to  
the valid combinations offered may occur.  
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S29WS128J0PBAW00 SPANSION 128/64 Megabit (8/4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Fla

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S29WS128J0PBAW000 SPANSION Flash, 8MX16, 55ns, PBGA84, 8 X 11.60 MM, FBGA-84

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S29WS128J0PBAW002 SPANSION Flash, 8MX16, 55ns, PBGA84, 8 X 11.60 MM, FBGA-84

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S29WS128J0PBAW003 SPANSION Flash, 8MX16, 55ns, PBGA84, 8 X 11.60 MM, FBGA-84

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