5秒后页面跳转
S27KL0643GABHB020 PDF预览

S27KL0643GABHB020

更新时间: 2024-11-22 11:10:47
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
57页 1166K
描述
64MBit 3.0 V Automotive (105°C) xSPI (Octal) HYPERRAM Gen 2.0 in 24 FBGA

S27KL0643GABHB020 数据手册

 浏览型号S27KL0643GABHB020的Datasheet PDF文件第2页浏览型号S27KL0643GABHB020的Datasheet PDF文件第3页浏览型号S27KL0643GABHB020的Datasheet PDF文件第4页浏览型号S27KL0643GABHB020的Datasheet PDF文件第5页浏览型号S27KL0643GABHB020的Datasheet PDF文件第6页浏览型号S27KL0643GABHB020的Datasheet PDF文件第7页 
S27KL0643, S27KS0643  
64Mb HYPERRAM™ self-refresh DRAM  
(PSRAM)  
Octal xSPI, 1.8 V/3.0 V  
Features  
• Interface  
- xSPI (Octal) interface  
- 1.8 V / 3.0 V interface support  
• Single ended clock (CK) - 11 bus signals  
• Optional differential clock (CK, CK#) - 12 bus signals  
- Chip select (CS#)  
- 8-bit data bus (DQ[7:0])  
- Hardware reset (RESET#)  
- Bidirectional read-write data strobe (RWDS)  
• Output at the start of all transactions to indicate refresh latency  
• Output during read transactions as read data strobe  
• Input during write transactions as write data mask  
- Optional DDR center-aligned read strobe (DCARS)  
• During read transactions RWDS is offset by a second clock, phase shifted from CK  
• The phase shifted clock is used to move the RWDS transition edge within the read data eye  
• Performance, power, and packages  
- 200 MHz maximum clock rate  
- DDR - transfers data on both edges of the clock  
- Data throughput up to 400 MBps (3,200 Mbps)  
- Configurable burst characteristics  
• Linear burst  
• Wrapped burst lengths:  
16 bytes (8 clocks)  
32 bytes (16 clocks)  
64 bytes (32 clocks)  
128 bytes (64 clocks)  
• Hybrid option - one wrapped burst followed by linear burst  
- Configurable output drive strength  
- Power modes  
• Hybrid Sleep mode  
• Deep power down  
- Array refresh  
• Partial memory array (1/8, 1/4, 1/2, and so on)  
• Full  
- Package  
• 24-ball FBGA  
- Operating temperature range  
• Industrial (I): -40°C to +85°C  
• Industrial Plus (V): -40°C to +105°C  
• Automotive, AEC-Q100 grade 3: -40°C to +85°C  
• Automotive, AEC-Q100 grade 2: -40°C to +105°C  
• Technology  
- 38-nm DRAM  
Datasheet  
www.infineon.com  
Please read the Important Notice and Warnings at the end of this document  
page 1 of 57  
002-24693 Rev. *E  
2022-04-19  

与S27KL0643GABHB020相关器件

型号 品牌 获取价格 描述 数据表
S27KL0643GABHB023 INFINEON

获取价格

64MBit 3.0 V Automotive (105°C) xSPI (Octal)
S27KL0643GABHI020 INFINEON

获取价格

64MBit 3.0 V Industrial (85°C) xSPI (Octal) H
S27KL0643GABHI023 INFINEON

获取价格

64MBit 3.0 V Industrial (85°C) xSPI (Octal) H
S27KL0643GABHV020 INFINEON

获取价格

64MBit 3.0 V Industrial (105°C) xSPI (Octal)
S27KL0643GABHV023 INFINEON

获取价格

64MBit 3.0 V Industrial (105°C) xSPI (Octal)
S27KS0641DPBHA020 CYPRESS

获取价格

Memory Circuit,
S27KS0641DPBHI020 CYPRESS

获取价格

Memory Circuit,
S27KS0641DPBHI023 CYPRESS

获取价格

HyperRAM™ Self-Refresh DRAM 3.0V/1.8V 64 Mb
S27KS0641DPBHV020 CYPRESS

获取价格

HyperRAM™ Self-Refresh DRAM 3.0V/1.8V 64 Mb
S27KS0641DPBHV023 CYPRESS

获取价格

HyperRAM™ Self-Refresh DRAM 3.0V/1.8V 64 Mb