Datasheet > S27KS0643GABHV023

S27KS0643GABHV023

更新时间： 2024-11-26 11:10:47

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
57页	1166K
描述
64MBit 1.8 V Industrial (105°C) xSPI (Octal) HYPERRAM Gen 2.0 in 24 FBGA

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

S27KS0643GABHV023 数据手册

浏览型号S27KS0643GABHV023的Datasheet PDF文件第2页

浏览型号S27KS0643GABHV023的Datasheet PDF文件第3页

浏览型号S27KS0643GABHV023的Datasheet PDF文件第4页

浏览型号S27KS0643GABHV023的Datasheet PDF文件第5页

浏览型号S27KS0643GABHV023的Datasheet PDF文件第6页

浏览型号S27KS0643GABHV023的Datasheet PDF文件第7页

S27KL0643, S27KS0643

64Mb HYPERRAM™ self-refresh DRAM

(PSRAM)

Octal xSPI, 1.8 V/3.0 V

Features

• Interface

- xSPI (Octal) interface

- 1.8 V / 3.0 V interface support

• Single ended clock (CK) - 11 bus signals

• Optional differential clock (CK, CK#) - 12 bus signals

- Chip select (CS#)

- 8-bit data bus (DQ[7:0])

- Hardware reset (RESET#)

- Bidirectional read-write data strobe (RWDS)

• Output at the start of all transactions to indicate refresh latency

• Output during read transactions as read data strobe

• Input during write transactions as write data mask

- Optional DDR center-aligned read strobe (DCARS)

• During read transactions RWDS is offset by a second clock, phase shifted from CK

• The phase shifted clock is used to move the RWDS transition edge within the read data eye

• Performance, power, and packages

- 200 MHz maximum clock rate

- DDR - transfers data on both edges of the clock

- Data throughput up to 400 MBps (3,200 Mbps)

- Configurable burst characteristics

• Linear burst

• Wrapped burst lengths:

16 bytes (8 clocks)

32 bytes (16 clocks)

64 bytes (32 clocks)

128 bytes (64 clocks)

• Hybrid option - one wrapped burst followed by linear burst

- Configurable output drive strength

- Power modes

• Hybrid Sleep mode

• Deep power down

- Array refresh

• Partial memory array (1/8, 1/4, 1/2, and so on)

• Full

- Package

• 24-ball FBGA

- Operating temperature range

• Industrial (I): -40°C to +85°C

• Industrial Plus (V): -40°C to +105°C

• Automotive, AEC-Q100 grade 3: -40°C to +85°C

• Automotive, AEC-Q100 grade 2: -40°C to +105°C

• Technology

- 38-nm DRAM

Datasheet

www.infineon.com

Please read the Important Notice and Warnings at the end of this document

page 1 of 57

002-24693 Rev. *E

2022-04-19

12 3 4 5 6 7...57

中文翻译

下载PDF

与S27KS0643GABHV023相关器件

型号	品牌	获取价格	描述	数据表
S28	FAIRCHILD	获取价格	Schottky Rectifiers
S28	YANGJIE	获取价格	SOD-123FL
S-28.66OHM0.01%	VISHAY	获取价格	Fixed Resistor, Wire Wound, 1W, 8.66ohm, 58V, 0.01% +/-Tol, -50,50ppm/Cel, Surface Mount,
S-28.87OHM0.01%	VISHAY	获取价格	Fixed Resistor, Wire Wound, 1W, 8.87ohm, 58V, 0.01% +/-Tol, -50,50ppm/Cel, Surface Mount,
S-2-8/10	COOPER	获取价格	Rejection base plug fuses â dual-element
S2800	GE	获取价格	10-A Silicon Controlled Rectifiers
S2800	MOTOROLA	获取价格	SCRs 10 AMPERES RMS 50 thru 800 VOLTS
S2800A	GE	获取价格	10-A Silicon Controlled Rectifiers
S2800A-16	MOTOROLA	获取价格	Silicon Controlled Rectifier, 10A I(T)RMS, 100V V(DRM), 100V V(RRM), 1 Element, TO-220, 2
S2800A-A	MOTOROLA	获取价格	暂无描述