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S25FL116K0XNFA010 PDF预览

S25FL116K0XNFA010

更新时间: 2024-09-19 18:30:55
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 光电二极管内存集成电路
页数 文件大小 规格书
90页 3059K
描述
Flash, 4MX4, PDSO8, WSON-8

S25FL116K0XNFA010 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:WSON-8Reach Compliance Code:compliant
HTS代码:8542.32.00.51风险等级:7.69
其他特性:ALSO CONFIGURABLE AS 16M X 1备用内存宽度:2
JESD-30 代码:R-PDSO-N8长度:6 mm
内存密度:16777216 bit内存集成电路类型:FLASH
内存宽度:4功能数量:1
端子数量:8字数:4194304 words
字数代码:4000000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:4MX4封装主体材料:PLASTIC/EPOXY
封装代码:HVSON封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE并行/串行:SERIAL
峰值回流温度(摄氏度):NOT SPECIFIED编程电压:3 V
筛选级别:AEC-Q100座面最大高度:0.85 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:NO LEAD端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:5 mmBase Number Matches:1

S25FL116K0XNFA010 数据手册

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S25FL116K/S25FL132K/S25FL164K  
16-Mbit (2 Mbyte)/32-Mbit (4 Mbyte)/  
64-Mbit (8 Mbyte), 3.0 V, SPI Flash Memory  
This product family has been retired and is not recommended for designs. For new and current designs, S25FL064L supersede the  
S25FL1-K family. These are the factory-recommended migration paths. Please refer to the S25FL-L Family datasheets for  
specifications and ordering information.  
Features  
Serial Peripheral Interface (SPI) with Multi-I/O  
– SPI Clock polarity and phase modes 0 and 3  
– 8-Byte Unique ID for each device  
– Non-volatile Status Register bits control protection modes  
– Software command protection  
– Command subset and footprint compatible with S25FL-K  
– Hardware input signal protection  
Read  
– Lock-Down until power cycle protection  
– OTP protection of security registers  
90 nm Floating Gate Technology  
– Normal Read (Serial):  
– 50 MHz clock rate (40 °C to +85 °C/105 °C)  
– Fast Read (Serial):  
– 108 MHz clock rate (40 °C to +85 °C/105 °C)  
– Dual Read:  
– 108 MHz clock rate (40 °C to +85 °C/105 °C)  
– Quad Read:  
Single Supply Voltage  
– 2.7 V to 3.6 V dustrial, Industrial Plus, and Extended  
temperature range)  
– 2.6 V to 3.6 V (Extended temperature range)  
– 108 MHz clock rate (40 °C to +85 °C/105 °C)  
– 54 MB/s maximum continuous data transfer rate  
(40 °C to +85 °C/105 °C)  
– Efficient Execute-In-Place (XIP)  
– Continuous and wrapped read modes  
– Serial Flash Discoverable Parameters (SFDP)  
Temperature Ranges  
– Industrial (40 °C to +85 °C)  
– Industrial Plus (40 °C to +105 °C)  
– Automotive, AEC-Q100 Grade 3 (–40°C to +85°C)  
– Automotive, AEC-Q100 Grade 2 (–40°C to +105°C))  
Package Options  
Program  
– S25FL116K  
– Serial-input Page Program (up to 256 bytes)  
– Program Suspend and Resume  
Erase  
– 8-lead SOIC (150 mil) – SOA008  
– 8-lead SOIC (208 mil) – SOC008  
– 8-contact WSON 5 mm x 6 mm – WND008  
– 24-ball BGA 6 mm 8 mm – FAB024 and FAC024  
– KGD / KGW  
– Uniform sector erase (4 kB)  
– Uniform block erase (64 kB)  
– Chip erase  
– S25FL132K  
– Erase Suspend and Resume  
Cycling Endurance  
– 100K Program-Erase cycles, minimum  
Data Retention  
– 8-lead SOIC (150 mil) – SOA008  
– 8-lead SOIC (208 mil) – SOC008  
– 8-contact USON 4 mm 4 mm – UNF008  
– 8-contact WSON 5 mm 6 mm – WND008  
– 24-ball BGA 6 mm 8 mm – FAB024 and FAC024  
– KGD / KGW  
– 20-year data retention, minimum  
Security  
– S25FL164K  
– Three 256-byte Security Registers with OTP protection  
– Low supply voltage protection of the entire memory  
– Pointer-based security protection feature (S25FL132K and  
S25FL164K)  
Top / Bottom relative Block Protection Range, 4 kB to all of  
memory  
– 8-lead SOIC (208 mil) – SOC008  
– 16-lead SOIC (300 mil) – SO3016  
– 8-contact WSON 5 mm 6 mm – WND008  
24-ball BGA 6 mm 8 mm – FAB024 and FAC024  
Cypress Semiconductor Corporation  
Document Number: 002-00497 Rev. *H  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised May 19, 2017  
 

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