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S25FL001D0FMFI011 PDF预览

S25FL001D0FMFI011

更新时间: 2024-09-16 22:43:43
品牌 Logo 应用领域
飞索 - SPANSION 闪存
页数 文件大小 规格书
38页 665K
描述
2 Megabit, 1 Megabit CMOS 3.0 Volt Flash Memory with 25 MHz SPI Bus Interface

S25FL001D0FMFI011 数据手册

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S25FL Family (Serial Peripheral Interface)  
S25FL002D, S25FL001D  
2 Megabit, 1 Megabit CMOS 3.0 Volt Flash Memory  
with 25 MHz SPI Bus Interface  
PRELIMINARY  
INFORMATION  
Distinctive Characteristics  
„
Package Option  
— Industry Standard Pinouts  
— 150 mil 8-pin SO package for 1Mb and 2Mb  
— 208 mil 8-pin SO package for 2Mb only  
— 8-contact WSON leadless package (6x5 mm)  
ARCHITECTURAL ADVANTAGES  
„
Single power supply operation  
— Full voltage range: 2.7 to 3.6 V read and program  
operations  
„
Memory Architecture  
— 2 Mb – Four sectors with 512 Kb each  
— 1 Mb – Four sectors with 256 Kb each  
Program  
— Page Program (up to 256 bytes) in 6 ms (typical)  
— Program cycles are on a page by page basis  
Erase  
PERFORMANCE CHARACTERISTICS  
„
Speed  
„
„
— 25 MHz clock rate (maximum)  
Power Saving Standby Mode  
— Standby Mode 1 µA (typical)  
„
— 0.25 s typical sector erase time (S25FL001D)  
— 0.5 s typical sector erase time (S25FL002D)  
— 1.0 s typical bulk erase time (S25FL001D)  
— 2.0 s typical bulk erase time (S25FL002D)  
Endurance  
— 100,000 cycles per sector typical  
Data Retention  
— 20 years typical  
Memory Protection Features  
„
Memory Protection  
— W# pin works in conjunction with Status Register Bits  
to protect specified memory areas  
„
„
— Status Register Block Protection bits (BP1, BP0) in  
status register configure parts of memory as read-  
only  
„
„
Device ID  
— Electronic signature  
Process Technology  
SOFTWARE FEATURES  
„
SPI Bus Compatible Serial Interface  
— Manufactured on 0.25 µm process technology  
Publication Number 30167 Revision A Amendment +1 Issue Date June 9, 2004  

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