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S25FL002D0FMAI011 PDF预览

S25FL002D0FMAI011

更新时间: 2024-11-08 22:43:43
品牌 Logo 应用领域
飞索 - SPANSION 闪存内存集成电路光电二极管时钟
页数 文件大小 规格书
38页 962K
描述
2 Megabit, 1 Megabit CMOS 3.0 Volt Flash Memory with 25 MHz SPI Bus Interface

S25FL002D0FMAI011 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOIC包装说明:SOP, SOP8,.3
针数:8Reach Compliance Code:compliant
ECCN代码:3A991.B.1.B.1HTS代码:8542.32.00.51
风险等级:5.87最大时钟频率 (fCLK):25 MHz
数据保留时间-最小值:20耐久性:100000 Write/Erase Cycles
JESD-30 代码:S-PDSO-G8JESD-609代码:e0
长度:5.23 mm内存密度:2097152 bit
内存集成电路类型:FLASH内存宽度:1
功能数量:1端子数量:8
字数:2097152 words字数代码:2000000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:2MX1
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP8,.3封装形状:SQUARE
封装形式:SMALL OUTLINE并行/串行:SERIAL
峰值回流温度(摄氏度):240电源:3/3.3 V
编程电压:3 V认证状态:Not Qualified
座面最大高度:2.03 mm串行总线类型:SPI
最大待机电流:0.000003 A子类别:Flash Memories
最大压摆率:0.02 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:TIN LEAD
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
类型:NOR TYPE宽度:5.23 mm
写保护:HARDWARE/SOFTWAREBase Number Matches:1

S25FL002D0FMAI011 数据手册

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S25FL Family (Serial Peripheral Interface)  
S25FL002D, S25FL001D  
2 Megabit, 1 Megabit CMOS 3.0 Volt Flash Memory  
with 25 MHz SPI Bus Interface  
PRELIMINARY  
INFORMATION  
Distinctive Characteristics  
„
Package Option  
— Industry Standard Pinouts  
— 150 mil 8-pin SO package for 1Mb and 2Mb  
— 208 mil 8-pin SO package for 2Mb only  
— 8-contact WSON leadless package (6x5 mm)  
ARCHITECTURAL ADVANTAGES  
„
Single power supply operation  
— Full voltage range: 2.7 to 3.6 V read and program  
operations  
„
Memory Architecture  
— 2 Mb – Four sectors with 512 Kb each  
— 1 Mb – Four sectors with 256 Kb each  
Program  
— Page Program (up to 256 bytes) in 6 ms (typical)  
— Program cycles are on a page by page basis  
Erase  
PERFORMANCE CHARACTERISTICS  
„
Speed  
„
„
— 25 MHz clock rate (maximum)  
Power Saving Standby Mode  
— Standby Mode 1 µA (typical)  
„
— 0.25 s typical sector erase time (S25FL001D)  
— 0.5 s typical sector erase time (S25FL002D)  
— 1.0 s typical bulk erase time (S25FL001D)  
— 2.0 s typical bulk erase time (S25FL002D)  
Endurance  
— 100,000 cycles per sector typical  
Data Retention  
— 20 years typical  
Memory Protection Features  
„
Memory Protection  
— W# pin works in conjunction with Status Register Bits  
to protect specified memory areas  
„
„
— Status Register Block Protection bits (BP1, BP0) in  
status register configure parts of memory as read-  
only  
„
„
Device ID  
— Electronic signature  
Process Technology  
SOFTWARE FEATURES  
„
SPI Bus Compatible Serial Interface  
— Manufactured on 0.25 µm process technology  
Publication Number 30167 Revision A Amendment +1 Issue Date June 9, 2004  

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