Datasheet > S25FL001D0FMAI013

S25FL001D0FMAI013

更新时间： 2024-11-06 22:43:43

品牌	Logo	应用领域
飞索 - SPANSION		闪存
页数	文件大小	规格书
38页	665K
描述
2 Megabit, 1 Megabit CMOS 3.0 Volt Flash Memory with 25 MHz SPI Bus Interface

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S25FL Family (Serial Peripheral Interface)

S25FL002D, S25FL001D

2 Megabit, 1 Megabit CMOS 3.0 Volt Flash Memory

with 25 MHz SPI Bus Interface

PRELIMINARY

INFORMATION

Distinctive Characteristics

Package Option

— Industry Standard Pinouts

— 150 mil 8-pin SO package for 1Mb and 2Mb

— 208 mil 8-pin SO package for 2Mb only

— 8-contact WSON leadless package (6x5 mm)

ARCHITECTURAL ADVANTAGES

Single power supply operation

— Full voltage range: 2.7 to 3.6 V read and program

operations

Memory Architecture

— 2 Mb – Four sectors with 512 Kb each

— 1 Mb – Four sectors with 256 Kb each

Program

— Page Program (up to 256 bytes) in 6 ms (typical)

— Program cycles are on a page by page basis

Erase

PERFORMANCE CHARACTERISTICS

Speed

— 25 MHz clock rate (maximum)

Power Saving Standby Mode

— Standby Mode 1 µA (typical)

— 0.25 s typical sector erase time (S25FL001D)

— 0.5 s typical sector erase time (S25FL002D)

— 1.0 s typical bulk erase time (S25FL001D)

— 2.0 s typical bulk erase time (S25FL002D)

Endurance

— 100,000 cycles per sector typical

Data Retention

— 20 years typical

Memory Protection Features

Memory Protection

— W# pin works in conjunction with Status Register Bits

to protect specified memory areas

— Status Register Block Protection bits (BP1, BP0) in

status register configure parts of memory as read-

only

Device ID

— Electronic signature

Process Technology

SOFTWARE FEATURES

SPI Bus Compatible Serial Interface

— Manufactured on 0.25 µm process technology

Publication Number 30167 Revision A Amendment +1 Issue Date June 9, 2004

12 3 4 5 6 7...38

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