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S1M-L-TP PDF预览

S1M-L-TP

更新时间: 2024-11-24 20:01:23
品牌 Logo 应用领域
美微科 - MCC 光电二极管
页数 文件大小 规格书
3页 265K
描述
Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN

S1M-L-TP 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:DO-214AA包装说明:R-PDSO-C2
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.1 VJEDEC-95代码:DO-214AA
JESD-30 代码:R-PDSO-C2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:30 A
元件数量:1端子数量:2
最高工作温度:150 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:1000 V
最大反向恢复时间:2 µs子类别:Rectifier Diodes
表面贴装:YES端子面层:Tin (Sn)
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

S1M-L-TP 数据手册

 浏览型号S1M-L-TP的Datasheet PDF文件第2页浏览型号S1M-L-TP的Datasheet PDF文件第3页 
S1A-L  
THRU  
S1M-L  
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates  
Compliant. See ordering information)  
For Surface Mount Applications  
·
1 Amp  
Silicon Rectifier  
50 to 1000 Volts  
Halogen free available upon request by adding suffix "-HF"  
Extremely Low Thermal Resistance  
Easy Pick And Place  
·
·
·
·
High Temp Soldering:260oC for 10Seconds At Terminals  
Epoxy meets UL 94 V-0 flammability rating  
Moisture Sensitivity Level 1  
Maximum Ratings  
Operating Temperature: -55°C to +150°C  
DO-214AA  
(SMB) (Lead Frame)  
Storage Temperature: -55°C to +150°C  
Maximum Thermal Resistance; 30°C/W Junction To Lead  
H
MCC  
Catalog  
Number  
Device  
Marking  
Maximum  
Recurrent  
Peak Reverse  
Voltage  
50V  
Maximum Maximum  
RMS  
Voltage  
DC  
Blocking  
Voltage  
50V  
J
S1A-L  
S1B-L  
S1D-L  
S1G-L  
S1J-L  
S1K-L  
S1M-L  
S1A  
S1B  
S1D  
S1G  
S1J  
35V  
70V  
100V  
200V  
100V  
200V  
140V  
280V  
420V  
560V  
700V  
400V  
600V  
400V  
600V  
A
C
S1K  
S1M  
800V  
1000V  
800V  
1000V  
E
D
B
G
Electrical Characteristics @ 25°C Unless Otherwise Specified  
DIMENSIONS  
Average Forward  
current  
IF(AV)  
1.0A  
TJ = 100°C  
INCHES  
MIN  
MM  
MIN  
DIM  
A
MAX  
.095  
.083  
.008  
.02  
MAX  
2.41  
2.10  
.20  
NOTE  
.075  
.077  
.002  
-----  
1.91  
1.96  
.05  
B
Peak Forward Surge  
Current  
IFSM  
30A  
8.3ms, half sine,  
C
D
-----  
.76  
.51  
E
.030  
.200  
.160  
.130  
.060  
.220  
.187  
.155  
1.52  
5.59  
4.75  
3.94  
G
H
5.08  
4.06  
3.30  
Maximum  
IFM = 1.0A;  
TJ = 25°C*  
Instantaneous  
Forward Voltage  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
VF  
1.1V  
J
SUGGESTED SOLDER  
PAD LAYOUT  
0.090"  
IR  
5µA  
50µA  
TJ = 25°C  
TJ = 125°C  
Typical Junction  
Capacitance  
CJ  
Trr  
12pF  
Measured at  
1.0MHz, VR=4.0V  
0.085”  
Maximum Reverse  
Recovery Time  
IF = 0.5A;IR = 1.0A;  
Irr = 0.25A;  
2.0µs  
0.070”  
*Pulse test: Pulse width 300 µsec, Duty cycle 2%  
Note: 1. High Temperature Solder Exemptions Applied, see EU Directive Annex 7.  
www.mccsemi.com  
Revision: C  
2013/08/20  
1 of 3  

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