5秒后页面跳转
S1M-T3 PDF预览

S1M-T3

更新时间: 2024-09-26 22:22:59
品牌 Logo 应用领域
WTE 整流二极管光电二极管瞄准线
页数 文件大小 规格书
3页 50K
描述
1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER

S1M-T3 数据手册

 浏览型号S1M-T3的Datasheet PDF文件第2页浏览型号S1M-T3的Datasheet PDF文件第3页 
WTE  
PO WER SEMICONDUCTORS  
S1A – S1M  
1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER  
Features  
!
Glass Passivated Die Construction  
!
!
!
!
!
!
Ideally Suited for Automatic Assembly  
Low Forward Voltage Drop  
Surge Overload Rating to 30A Peak  
Low Power Loss  
Built-in Strain Relief  
Plastic Case Material has UL Flammability  
Classification Rating 94V-O  
B
D
A
F
C
H
G
E
SMB/DO-214AA  
Min  
Mechanical Data  
Dim  
A
Max  
3.94  
4.70  
2.11  
!
!
Case: Molded Plastic  
3.30  
Terminals: Solder Plated, Solderable  
per MIL-STD-750, Method 2026  
Polarity: Cathode Band or Cathode Notch  
Marking: Type Number  
B
4.06  
C
1.91  
!
!
!
D
0.152  
5.08  
0.305  
5.59  
2.44  
0.203  
1.27  
E
Weight: 0.093 grams (approx.)  
F
2.13  
G
H
0.051  
0.76  
All Dimensions in mm  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Characteristic  
Symbol  
S1A  
S1B  
S1D  
S1G  
S1J  
S1K  
S1M  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
50  
35  
100  
70  
200  
140  
400  
600  
420  
800  
560  
1000  
700  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
280  
1.0  
V
A
Average Rectified Output Current @TL = 100°C  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed on  
rated load (JEDEC Method)  
IFSM  
30  
A
Forward Voltage  
@IF = 1.0A  
VFM  
IRM  
1.10  
V
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TA = 25°C  
@TA = 125°C  
5.0  
200  
µA  
Reverse Recovery Time (Note 1)  
trr  
Cj  
2.5  
15  
µS  
pF  
Typical Junction Capacitance (Note 2)  
Typical Thermal Resistance (Note 3)  
Operating and Storage Temperature Range  
RJL  
Tj, TSTG  
30  
K/W  
°C  
-65 to +175  
Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A,  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.  
3. Mounted on P.C. Board with 8.0mm2 land area.  
S1A – S1M  
1 of 3  
© 2002 Won-Top Electronics  

与S1M-T3相关器件

型号 品牌 获取价格 描述 数据表
S1M-T3-LF WTE

获取价格

Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC,
S1M-TP MCC

获取价格

Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-214AA, SMB, 2 PIN
S1MU DYELEC

获取价格

1.0 AMP SURFACE MOUNT PASSIVATED RECTIFIERS
S1MWF DIODES

获取价格

1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER
S1MWF-7 DIODES

获取价格

1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER
S1MWFM DIODES

获取价格

1.0A SURFACE MOUNT STANDARD RECOVERY RECTIFIER
S1N DIODES

获取价格

1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER
S1N1RP LITTELFUSE

获取价格

Silicon Controlled Rectifier, 1A I(T)RMS, 100V V(DRM), 100V V(RRM), 1 Element, 3 LEAD
S1N3016 MICROSEMI

获取价格

Zener Diode, 6.8V V(Z), 20%, 1W, Silicon, Unidirectional, DO-13, HERMETIC SEALED, METAL GL
S1N3016AE3 MICROSEMI

获取价格

Zener Diode, 6.8V V(Z), 10%, 1W, Silicon, Unidirectional, DO-13, HERMETIC SEALED, METAL GL