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S1M-M3 PDF预览

S1M-M3

更新时间: 2024-01-03 01:35:12
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 83K
描述
Ideal for automated placement

S1M-M3 数据手册

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S1A-M3, S1B-M3, S1D-M3, S1G-M3, S1J-M3, S1K-M3, S1M-M3  
www.vishay.com  
Vishay General Semiconductor  
Surface Mount Glass Passivated Rectifier  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Glass passivated pellet chip junction  
• Low forward voltage drop  
• Low leakage current  
• High forward surge capability  
DO-214AC (SMA)  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PRIMARY CHARACTERISTICS  
IF(AV)  
1.0 A  
50 V, 100 V, 200 V, 400 V, 600 V,  
800 V, 1000 V  
VRRM  
MECHANICAL DATA  
IFSM  
40 A, 30 A  
5 mJ  
Case: DO-214AC (SMA)  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-M3  
commercial grade  
EAS  
IR  
1.0 μA, 5.0 μA  
1.1 V  
- halogen-free, RoHS-compliant, and  
VF  
TJ max.  
Package  
Diode variations  
150 °C  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
M3 suffix meets JESD 201 class 1A whisker test  
DO-214AC (SMA)  
Single die  
Polarity: Color band denotes cathode end  
TYPICAL APPLICATIONS  
For use in general purpose rectification of power supplies,  
inverters, converters and freewheeling diodes for consumer,  
automotive and telecommunication.  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL S1A  
S1B  
SB  
S1D  
SD  
S1G  
SG  
S1J  
SJ  
S1K  
SK  
S1M UNIT  
Device marking code  
SA  
SM  
Max. recurrent peak reverse voltage  
Max. RMS voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
1.0  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
A
Max. DC blocking voltage  
Max. average forward rectified current (fig. 1)  
100  
1000  
IF(AV)  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
40  
30  
A
Non-repetitive peak reverse avalanche energy  
EAS  
5
mJ  
°C  
at 25 °C, IAS = 1 A, L = 10 mH  
Operating junction and storage temperature range  
TJ, TSTG  
-55 to +150  
Revision: 19-Feb-16  
Document Number: 89272  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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