Datasheet > S1GVB80-C

S1GVB80-C

更新时间： 2024-11-13 01:09:03

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描述
Voltage 200V ~ 800V 1.0 Amp Glass Passivited Bridge Rectifiers

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中文翻译

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数据手册

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S1GVB80-C 数据手册

S1GVB20-C ~ S1GVB80-C

Voltage 200V ~ 800V

1.0 Amp Glass Passivited Bridge Rectifiers

Elektronische Bauelemente

RoHS Compliant Product

FEATURES

GVB

ꢀ

Ideal for printed circuit board

Low forward voltage drop, high current capability

Reliable low cost construction utilizing molded plastic

technique results in inexpensive product

ꢀ

These are Halogen & Pb Free components

Millimeter

REF.

Min.

15.3

7.00

9.00

10.0

1.20

Max.

15.9

7.40

9.60

Min.

Max.

0.80

4.10

0.60

1.10

3.60

0.70

3.90

0.40

0.70

3.20

1.40

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(Rating 25°C ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive or inductive load.

For capacitive load, de-rate current by 20%.)

Part Number

Parameter

Symbol

V_RRM

I_O

Unit

S1GVB20-C

S1GVB40-C

S1GVB60-C S1GVB80-C

600 800

Maximum Recurrent Peak Reverse Voltage

200

400

Average Rectified Output Current @50H

wave, R-load, T_A=25°C

sine

Peak Forward Surge Current @

50H_Zsine wave, 1 cycle, T_A=25°C

I_FSM

Maximum Peak Forward Voltage²

Peak Reverse Current ¹

V_FM

I_RRM

I²t

1.05

µA

I²t Rating for Fusing @1ms≤t＜8.3ms, T_J=25°C

A²s

°C/W

°C

Typical Thermal Resistance

θJA

θJL

Typical Thermal Resistance

Operating and Storage temperature range

T_J,T_STG

150, -40~150

Notes：

1. V_RM=V_RRM, Pulse measurement, Rating of per diode.

2. I_FM=0.5A, Pulse measurement, Rating of per diode

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

27-Feb-2013 Rev. A

Page 1 of 2

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