Datasheet > S1HNK60

S1HNK60

更新时间： 2024-10-02 03:34:43

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
8页	303K
描述
N-CHANNEL 600V - 8W - 0.3A SO-8 SuperMESH-TMPower MOSFET

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S1HNK60 数据手册

STS1HNK60

N-CHANNEL 600V - 8Ω - 0.3A SO-8

SuperMESH™Power MOSFET

TYPE

DSS

DS(on)

STS1HNK60

600 V

< 8.5 Ω

0.3 A

2 W

■

TYPICAL R (on) = 8 Ω

EXTREMELY HIGH dv/dt CAPABILITY

100% AVALANCHE TESTED

GATE CHARGE MINIMIZED

NEW HIGH VOLTAGE BENCHMARK

SO-8

DESCRIPTION

The SuperMESH™ series is obtained through an

extreme optimization of ST’s well established strip-

based PowerMESH™ layout. In addition to pushing

on-resistance significantly down, special care is tak-

en to ensure a very good dv/dt capability for the

most demanding applications. Such series comple-

ments ST full range of high voltage MOSFETs in-

cluding revolutionary MDmesh™ products.

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

SWITCH MODE LOW POWER SUPPLIES

(SMPS)

LOW POWER, LOW COST CFL (COMPACT

FLUORESCENT LAMPS)

LOW POWER BATTERY CHARGERS

ORDERING INFORMATION

SALES TYPE

MARKING

PACKAGE

SO-8

PACKAGING

STS1HNK60

S1HNK60

TAPE & REEL

August 2003

1/8

12 3 4 5 6 7 8

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