Datasheet > S1J

S1J

更新时间： 2024-01-09 14:14:44

品牌	Logo	应用领域
森美特 - SUNMATE		二极管光电二极管 IOT
页数	文件大小	规格书
2页	377K
描述
1.0A patch rectifier diode 600V SMA series

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中文翻译

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数据手册

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S1J 数据手册

S1A - S1M

SURFACE MOUNT SILICON RECTIFIER DIODES

VOLTAGE RANGE: 50 - 1000V

CURRENT: 1.0 A

Features

Ideally Suited for Automatic Assembly

Low Forward Voltage Drop

Low Power Loss

Built-in Strain Relief

Plastic Case Material has UL Flammability

Classification Rating 94V-O

SMA(DO-214AC)

Dim

MinMax

Mechanical Data

2.29

4.00

1.27

0.15

4.80

0.10

0.76

2.01

2.92

4.60

1.63

0.31

5.59

0.20

1.52

2.62

Case: SMA/DO-214AC, Molded Plastic

Terminals: Solder Plated, Solderable

per MIL-STD-750, Method 2026

Polarity: Cathode Band or Cathode Notch

Marking: Type Number

Weight: 0.064 grams (approx.)

All Dimensions in mm

Maximum Ratings and Electrical Characteristics

T_A= 25ꢀC unless otherwise specified

For capacitive load, derate current by 20%.

Single phase, half wave, 60Hz, resistive or inductive load.

Characteristic

Symbol

S1A

S1B

S1D

S1G

S1J

S1K

S1M

Unit

RRM

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RWM

100

200

140

400

600

420

800

560

1000

700

R(RMS)

RMS Reverse Voltage

280

1.0

Average Rectified Output Current @T_L= 100°C

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

FSM

Forward Voltage

@I_F= 1.0A

1.10

Peak Reverse Current

At Rated DC Blocking Voltage

@T_A= 25°C

@T_A= 125°C

5.0

200

µA

Reverse Recovery Time (Note 1)

2.5

µS

Typical Junction Capacitance (Note 2)

Typical Thermal Resistance (Note 3)

ꢀ

K/W

°C

j, STG

T T

Operating and Storage Temperature Range

-65 to +175

Note: 1. Measured with I_F= 0.5A, I_R= 1.0A, I_rr= 0.25A,

2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.

3. Mounted on P.C. Board with 8.0mm²land area.

1 of 2

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