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S1B

更新时间: 2024-11-20 09:25:55
品牌 Logo 应用领域
德欧泰克 - DIOTEC 整流二极管
页数 文件大小 规格书
2页 110K
描述
Surface Mount Silicon Rectifier Diodes

S1B 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:DO-214AC包装说明:SMA, 2 PIN
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00
风险等级:0.53配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.1 VJEDEC-95代码:DO-214AC
JESD-30 代码:R-PDSO-C2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:48 A
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-50 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:100 V子类别:Rectifier Diodes
表面贴装:YES端子面层:Matte Tin (Sn) - annealed
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

S1B 数据手册

 浏览型号S1B的Datasheet PDF文件第2页 
S1A ... S1Y  
S1A ... S1Y  
Surface Mount Silicon Rectifier Diodes  
Silizium-Gleichrichterdioden für die Oberflächenmontage  
Version 2011-05-31  
Nominal current – Nennstrom  
1 A  
5± 0.2  
Plastic case  
~ SMA  
Kunststoffgehäuse  
~ DO-214AC  
Weight approx. – Gewicht ca.  
0.07 g  
1± 0.3  
0.15  
Plastic material has UL classification 94V-0  
Gehäusematerial UL94V-0 klassifiziert  
Type  
Typ  
Standard packaging taped and reeled  
Standard Lieferform gegurtet auf Rolle  
4.5± 0.3  
Dimensions - Maße [mm]  
Maximum ratings and Characteristics 1)  
Grenz- und Kennwerte 1)  
Leakage current – Sperrstrom  
Tj = 100°C  
Type  
Typ  
(Repetitive) Peak reverse voltage  
(Periodische-)Spitzensperrspannung Durchlass-Spannung  
Forward voltage  
VRRM [V] / VRSM [V]  
VF [V] @ IF = 1A  
< 1.1  
IR [µA] @ VRRM  
IR [µA] @ VRRM  
< 50  
S1A  
S1B  
S1D  
S1G  
S1J  
50  
100  
< 5  
< 5  
< 5  
< 5  
< 5  
< 5  
< 5  
< 5  
< 5  
< 5  
< 5  
< 1.1  
< 50  
200  
< 1.1  
< 50  
400  
< 1.1  
< 50  
600  
< 1.1  
< 50  
S1K  
S1M  
S1T  
S1W  
S1X  
S1Y  
800  
< 1.1  
< 50  
1000  
1300  
1600  
1800  
2000  
< 1.1  
< 50  
< 1.1  
< 50  
< 1.1  
< 50  
< 1.1  
< 50  
< 1.1  
< 50  
Max. average forward rectified current, R-load  
Dauergrenzstrom in Einwegschaltung mit R-Last  
TT = 100°C  
IFAV  
1 A  
Repetitive peak forward current – Periodischer Spitzenstrom  
f > 15 Hz  
TA = 25°C  
IFRM  
IFSM  
6 A 2)  
Peak forward surge current, 50/60 Hz half sine-wave  
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle  
30/32 A  
Rating for fusing, t < 10 ms – Grenzlastintegral, t < 10 ms  
Typical junction capacitance – Typische Sperrschichtkapzität  
TA = 25°C  
VR = 4 V  
i2t  
Cj  
4.5 A2s  
typ. 12 pF  
Junction temperature – Sperrschichttemperatur  
Storage temperature – Lagerungstemperatur  
-50...+150°C  
-50...+150°C  
Tj  
TS  
Thermal resistance junction-ambient − Wärmewiderstand Sperrschicht-Umgebung  
Thermal resistance junction-terminal − Wärmewiderstand Sperrschicht-Anschluss  
RthA  
RthT  
< 70 K/W 2)  
< 30 K/W  
1
2
Tj = 25°C unless otherwise specified – Tj = 25°C wenn nicht anders angegeben  
Mounted on P.C. board with 25 mm2 copper pads at each terminal  
Montage auf Leiterplatte mit 25 mm2 Kupferbelag (Lötpad) an jedem Anschluss  
© Diotec Semiconductor AG  
http://www.diotec.com/  
1
 
 

S1B 替代型号

型号 品牌 替代类型 描述 数据表
S1D DIOTEC

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Surface Mount Silicon Rectifier Diodes
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Ultrafast Switching Surface Mount Si-Rectifiers

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