Datasheet > S1BAF

S1BAF

更新时间： 2023-12-06 19:46:42

品牌	Logo	应用领域
鲁光 - LGE		整流二极管普通整流二极管
页数	文件大小	规格书
2页	1433K
描述
普通整流二极管

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中文翻译

获取价格

数据手册

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S1BAF 数据手册

S1AAF--S1MAF

SURFACE M OUNT RECTIFIERS

FEATURES

SMAF

Low profile package

ꢀ

Cathode Band

Top View

For surface mounted applications

Built-in strain relief, ideal for automated placement

Plastic package has Underwriters Laboratory

Flammability Classification

0.110(2.80)

0.094(2.40)

0.059(1.50)

0.051(1.30)

0.145(3.70)

0.128(3.25)

0.012(0.30)

0.004(0.10)

0.059(1.50)

0.039(1.00)

High temperature soldering: 260℃/10 seconds at terminals

MECHANICAL DATA

0.047(1.20)

0.028(0.60)

ꢀ

Case: JEDEC SMAFL, molded plastic over passivated chip

Terminals: Solder Plated, solderable per MIL-STD- 750, Method 2026

Polarity: Color band denotes cathode end

0.190(4.85)

0.172(4.35)

Dimensions in inches and (millimeters)

Marking Information

LGE：Lu Guang Electronic

XXXX：marking code (S1A-S1M)

XXXX

Maximum Ratings(@TA = 25°C unless otherwise specified)

S1AAF S1BAF S1DAF S1GAF

S1JAF

600

S1KAF S1MAF

Characteristic

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Symbol

V_RRM

UNITS

100

200

140

200

400

280

400

800

560

800

1000

V_RWS

420

700

Maximum DC blocking voltage

Maximum average forward rectified current at

T_L=110℃

V_DC

100

600

1000

I_F(AV)

1.0

Peak forward surge current @ T_L= 110°C

8.3mssingle half-sine-wave superimposed

on rated load(JEDEC Method)

I_FSM

30.0

Thermal Characteristics

Characteristic

S1AAF S1BAF S1DAF S1GAF

S1JAF

S1KAF S1MAF

UNITS

p F

Symbol

C_J

Typical junction capacitance (NOTE 1)

Typical thermal resistance (NOTE 2)

12.0

50.0

R _{θ JA}

℃/W

Operating junction and storage temperature range

T_JT_STG

-55----+175

℃

Electrical Characteristics ^{(@TA = 25°C unless otherwise specified)}

S1AAF S1BAF S1DAF S1GAF

S1JAF

S1KAF S1MAF

UNITS

Characteristic

Maximum Instantaneous Forward Voltage

at 1.0A

Symbol

V_F

1.1

Maximum DC reverse current T_A=25℃

at rated DC blocking voltage T_A=125℃

1.0

I_R

μ A

NOTE: 1. Measured at 1.0MHz and applied reverse voltage of 4.0 Volts

2. Thermal resistance from junction to ambient and junction to lead P.C.B. mounted on 0.27''X0.27''(7.0X7.0mm2) copper pad areas

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170701-P1

中文翻译

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