S1BA

更新时间： 2024-09-21 09:25:55

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	86K
描述
Standard Surface Mount Glass Passivated Rectifier

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S1BA 数据手册

Not for New Design - End of Life - Last Available Purchase Date is 31-May-2011

S1BA thru S1MA

Vishay General Semiconductor

Standard Surface Mount Glass Passivated Rectifier

FEATURES

• Low profile package

• Ideal for automated placement

• Glass passivated chip junction

• Low forward voltage drop

• Low leakage current

• High forward surge capability

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

DO-214AC (SMA)

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in general purpose rectification of power supplies,

inverters, converters, and freewheeling diodes for consumer

and telecommunication.

PRIMARY CHARACTERISTICS

I_F(AV)

1.0 A

Note

•

These devices are not AEC-Q101 qualified.

V_RRM

I_FSM

100 V to 1000 V

30 A

MECHANICAL DATA

Case: DO-214AC (SMA)

I_R

3.0 μA

V_Fat I_F= 1.0 A

T_Jmax.

0.861 V

150 °C

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS compliant, commercial grade

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test

Polarity: Color band denotes the cathode end

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

S1BA

S1DA

S1GA

S1JA

S1KA

S1MA

UNIT

Device marking code

Maximum repetitive peak reverse voltage

Average forward current

V_RRM

I_F(AV)

100

200

400

600

800

1000

1.0

Peak forward surge current 10 ms single half

sine-wave superimposed on rated load

I_FSM

Operating junction and storage temperature range

T_J, T_STG

- 55 to + 150

°C

ELECTRICAL CHARACTERISTICS (T_A= 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

TYP.

0.960

0.861

0.09

MAX.

UNIT

T_J= 25 °C

1.1

(1)

Instantaneous forward voltage

I_F= 1.0 A

V_F

T_J= 125 °C

T_J= 25 °C

T_J= 125 °C

(2)

Reverse current

Rated V_R

I_R

μA

I_F= 0.5 A, I_R= 1.0 A,

I_rr= 0.25 A

Typical reverse recovery time

Typical junction capacitance

t_rr

1.0

μs

4.0 V, 1 MHz

C_J

Notes

(1)

(2)

Pulse test: 300 μs pulse width, 1 % duty cycle

Pulse test: Pulse width  40 ms

Document Number: 88968

Revision: 14-Jan-11

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

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