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S1BA-E3/5AT PDF预览

S1BA-E3/5AT

更新时间: 2024-11-24 20:04:15
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
5页 101K
描述
Rectifier Diode, 1 Element, 1A, 100V V(RRM),

S1BA-E3/5AT 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.81
配置:SINGLE二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.1 VJESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:30 A
元件数量:1最高工作温度:150 °C
最大输出电流:1 A最大重复峰值反向电压:100 V
子类别:Rectifier Diodes表面贴装:YES
端子面层:Matte Tin (Sn)Base Number Matches:1

S1BA-E3/5AT 数据手册

 浏览型号S1BA-E3/5AT的Datasheet PDF文件第2页浏览型号S1BA-E3/5AT的Datasheet PDF文件第3页浏览型号S1BA-E3/5AT的Datasheet PDF文件第4页浏览型号S1BA-E3/5AT的Datasheet PDF文件第5页 
New Product  
S1BA thru S1MA  
Vishay General Semiconductor  
Surface Mount Glass-Passivated Recitifiers  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Glass passivated chip junction  
• Low forward voltage drop  
• Low leakage current  
• High forward surge capability  
• Meets MSL level 1, per J-STD-020, LF maximum  
DO-214AC (SMA)  
peak of 260 °C  
• Solder dip 260 °C, 40 s  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
For use in general purpose rectification of power  
supplies, inverters, converters, and freewheeling  
diodes for consumer and telecommunication.  
(Note: These devices are not Q101 qualified.)  
PRIMARY CHARACTERISTICS  
IF(AV)  
1 A  
VRRM  
IFSM  
100 V to 1000 V  
30 A  
IR  
3.0 µA  
MECHANICAL DATA  
Case: DO-214AC (SMA)  
VF at IF = 1.0 A  
TJ max.  
0.861 V  
150 °C  
Epoxy meets UL 94V-0 flammability rating  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
E3 suffix for consumer grade, meets JESD 201 class  
1A whisker test  
Polarity: Color band denotes the cathode end  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
S1BA  
S1DA  
DA  
S1GA  
GA  
S1JA  
JA  
S1KA  
KA  
S1MA  
MA  
UNIT  
Device marking code  
BA  
Maximum repetitive peak reverse voltage  
Average forward current  
VRRM  
IF(AV)  
100  
200  
400  
600  
800  
1000  
V
A
1.0  
30  
Peak forward surge current 10 ms single half  
sine-wave superimposed on rated load  
IFSM  
A
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 150  
°C  
Document Number: 88968  
Revision: 26-May-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1

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