Datasheet > RZQ045P01

RZQ045P01

更新时间： 2024-10-16 07:03:51

品牌	Logo	应用领域
罗姆 - ROHM		驱动
页数	文件大小	规格书
6页	172K
描述
1.5V Drive Pch MOSFET

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中文翻译

获取价格

数据手册

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RZQ045P01 数据手册

RZQ045P01

Transistors

1.5V Drive Pch MOSFET

RZQ045P01

zDimensions (Unit : mm)

zStructure

Silicon P-channel MOSFET

TSMT6

1.0MAX

2.9

1.9

0.95 0.95

0.85

0.7

zFeatures

(6)

(5)

(4)

1) Low on-resistance.

2) High power package.

3) Low voltage drive. (1.5V)

0~0.1

(1)

(2)

(3)

1pin mark

0.16

0.4

Each lead has same dimensions

Abbreviated symbol : YG

zApplications

Switching

zPackaging specifications

zEquivalent circuit

Package

Taping

(6)

(5)

(4)

Type

Code

Basic ordering unit (pieces)

3000

∗2

RZQ045P01

∗1

(1) Drain

(2) Drain

(3) Gate

(4) Source

(5) Drain

(6) Drain

(1)

(2)

(3)

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

zAbsolute maximum ratings (Ta=25°C)

Parameter

Drain-source voltage

Gate-source voltage

Symbol

V_DSS

V_GSS

I_D

Limits

−12

Unit

Continuous

4.5

Drain current

Pulsed

∗1

I_DP

Source current

(Body diode)

Continuous

I_S

−1

∗1

∗2

Pulsed

I_SP

−12

1.25

150

Total power dissipation

Channel temperature

P_D

°C

Tch

Tstg

Range of Storage temperature

∗1 Pw≤10µs, Duty cycle≤1%

∗2 Mounted on a ceramic board

−55 to +150

zThermal resistance

Parameter

Symbol

Rth(ch-a) ^∗

Limits

100

Unit

Channel to ambient

∗ Mounted on a ceramic board.

°C / W

1/5

12 3 4 5 6

中文翻译

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