RZR020P01TL

更新时间： 2024-10-15 12:02:51

品牌	Logo	应用领域
罗姆 - ROHM		驱动
页数	文件大小	规格书
5页	164K
描述
1.5V Drive Pch MOSFET

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中文翻译

获取价格

数据手册
替代型号

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RZR020P01TL 数据手册

1.5V Drive Pch MOSFET

RZR020P01

zStructure

zDimensions (Unit : mm)

Silicon P-channel MOSFET

TSMT3

1.0MAX

2.9

0.4

0.85

0.7

(

)

zFeatures

1) Low on-resistance.

2) Built-in G-S Protection Diode.

3) Small and Surface Mount Package

(TSMT3).

( )

0.95 0.95

1.9

0.16

(1) Gate

Each lead has same dimensions

(2) Source

(3) Drain

4) Low voltage drive (1.5V).

Abbreviated symbol : ZE

zApplications

zInner circuit

Switching

(3)

zPackaging specifications

∗2

Package

Taping

(1)

Type

Code

Basic ordering unit (pieces)

3000

∗1

RZR020P01

(1) Gate

(2)

(2) Source

(3) Drain

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

zAbsolute maximum ratings (Ta=25°C)

Parameter

Drain-source voltage

Gate-source voltage

Symbol

Limits

Unit

V_DSS

V_GSS

I_D

−12

Continuous

Pulsed

Drain current

∗1

I_DP

Source current

(Body diode)

Continuous

Pulsed

I_S

−0.8

−6

1.0

∗1

∗2

I_SP

Total power dissipation

Channel temperature

P_D

°C

Tch

Tstg

150

Range of storage temperature

∗1 Pw≤10µs, Duty cycle≤1%

∗2 When mounted on a ceramic board.

−55 to +150

zThermal resistance

Parameter

Symbol

Rth (ch-a) ^∗

Limits

125

Unit

Channel to ambient

∗ When mounted on a ceramic board.

°C / W

www.rohm.com

2009.03 - Rev.A

1/4

12 3 4 5

中文翻译

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RZR020P01TL 替代型号

型号	品牌	替代类型	描述	数据表
RZF020P01TL	ROHM	功能相似	Small Signal Field-Effect Transistor, 2A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-o

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