Datasheet > RV1C001ZP

RV1C001ZP

更新时间： 2024-09-13 12:22:03

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
11页	701K
描述
Pch -20V -100mA Small Signal MOSFET

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RV1C001ZP 数据手册

RV1C001ZP

Pch -20V -100mA Small Signal MOSFET

Datasheet

lOutline

(3)

V_DSS

-20V

3.8W

VML0806

R_DS(on)(Max.)

I_D

-100mA

100mW

(2)

(1)

P_D

lFeatures

lInner circuit

1) The world smallest Package (0806size).

(1) Source

(2) Gate

(3) Drain

2) Low voltage drive(-1.2V) makes this

device ideal for partable equipment.

3) Drive circuits can be simple.

4) Built-in G-S Protection Diode.

*1 BODY DIODE

*2 ESD PROTECTION DIODE

lPackaging specifications

Packaging

Taping

180

Reel size (mm)

lApplication

Tape width (mm)

Type

Switching

Basic ordering unit (pcs)

8,000

T2L

Taping code

Marking

lAbsolute maximum ratings(T_a= 25°C)

Parameter

Symbol

V_DSS

Value

-20

Unit

Drain - Source voltage

Continuous drain current

Pulsed drain current

I_D

100

I_D,pulse

400

V_GSS

Gate - Source voltage

Power dissipation

10

100

°C

P_D

T_j

Junction temperature

Range of storage temperature

150

T_stg

°C

-55 to +150

lThermal resistance

Values

Parameter

Symbol

Unit

°C/W

Min.

Typ.

Max.

1250

Thermal resistance, junction - ambient

R_thJA

www.rohm.com

2012.08 - Rev.A

1/10

12 3 4 5 6 7...11

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