Datasheet > RU1E002SP

RU1E002SP

更新时间： 2024-10-14 09:42:03

品牌	Logo	应用领域
罗姆 - ROHM		驱动
页数	文件大小	规格书
6页	1138K
描述
4V Drive Pch MOSFET

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中文翻译

获取价格

数据手册

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RU1E002SP 数据手册

Data Sheet

4V Drive Pch MOSFET

RU1E002SP

 Structure

 Dimensions (Unit : mm)

UMT3F

Silicon P-channel MOSFET

2.0

0.9

0.32

(3)

Features

1) High-speed switching.

2) Small package (UMT3F).

3) 4V drive.

(1)

(2)

0.13

0.65 0.65

1.3

Abbreviated symbol : WP

 Application

Switching

 Packaging specifications

 Inner circuit

(3)

Package

Taping

TCL

3000



Type

Code

Basic ordering unit (pieces)

∗1

RU1E002SP

∗2

(1)

(2)

(1) Gate

(2) Source

(3) Drain

∗1 BODY DIODE

∗2 ESD PROTECTION DIODE

 Absolute maximum ratings (Ta = 25C)

Parameter Symbol

Drain-source voltage

Limits

30

Unit

V_DSS

V_GSS

I_D

Gate-source voltage

20

Continuous

Pulsed

0.25

0.5

Drain current

I_DP

Power dissipation

P_D

0.2

C

Channel temperature

Tch

Tstg

150

Range of storage temperature

*1 P_W10s, Duty cycle1%

55 to 150

*2 Each terminal mounted on a reference land.

 Thermal resistance

Parameter

Symbol

Rth (ch-a)^*

Limits

625

Unit

Channel to Ambient

C / W

*Each terminal mounted on a reference land.

www.rohm.com

2011.08 - Rev.A

1/5

12 3 4 5 6

中文翻译

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