Datasheet > RU1H221Q

RU1H221Q

更新时间： 2024-10-15 17:01:27

品牌	Logo	应用领域
锐骏半导体 - RUICHIPS		/
页数	文件大小	规格书
8页	410K
描述
TO-247

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

RU1H221Q 数据手册

RU1H221Q

N-Channel Advanced Power MOSFET

Features

Pin Description

• 113V/220A,

R_{DS (ON)}=4.4mΩ(Typ.)@V_GS=10V

• Reliable and Rugged

• Ultra Low On-Resistance

• 100% avalanche tested

• 175°C Operating Temperature

• Lead Free and Green Devices Available (RoHS Compliant)

TO247

Applications

• DC-DC Converters and Off-line UPS

• High Efficiency Synchronous Rectification in SMPS

• Power Management in Inverter System

N-Channel MOSFET

Absolute Maximum Ratings

Parameter

Symbol

Rating

Unit

Common Ratings (T_C=25°C Unless Otherwise Noted)

V_DSS

V_GSS

T_J

Drain-Source Voltage

113

±25

Gate-Source Voltage

Maximum Junction Temperature

Storage Temperature Range

Diode Continuous Forward Current

175

°C

T_STG

I_S

-55 to 175

220

T_C=25°C

Mounted on Large Heat Sink

①

300μs Pulse Drain Current Tested

T_C=25°C

T_C=100°C

T_C=25°C

T_C=100°C

880

220

155

416

208

0.36

I_DP

②

Continuous Drain Current(V_GS=10V)

Maximum Power Dissipation

I_D

P_D

Thermal Resistance-Junction to Case

Thermal Resistance-Junction to Ambient

R_JC

R_JA

°C/W

Drain-Source Avalanche Ratings

③

E_AS

Avalanche Energy, Single Pulsed

900

Ruichips Semiconductor Co., Ltd

Rev. A– AUG., 2015

www.ruichips.com

12 3 4 5 6 7 8

中文翻译

下载PDF

与RU1H221Q相关器件

型号	品牌	获取价格	描述	数据表
RU1H221R	RUICHIPS	获取价格	TO-220
RU1H301Q	RUICHIPS	获取价格	N-Channel Advanced Power MOSFET
RU1H31L	RUICHIPS	获取价格	TO252
RU1H35K	RUICHIPS	获取价格	TO-251
RU1H35L	RUICHIPS	获取价格	N-Channel Advanced Power MOSFET
RU1H35Q	RUICHIPS	获取价格	N-Channel Advanced Power MOSFET
RU1H35R	RUICHIPS	获取价格	N-Channel Advanced Power MOSFET
RU1H35S	RUICHIPS	获取价格	N-Channel Advanced Power MOSFET
RU1H36L	RUICHIPS	获取价格	TO-252
RU1H36R	RUICHIPS	获取价格	N-Channel Advanced Power MOSFET