Data Sheet
10V Drive Nch MOSFET
RSJ400N06
Structure
Dimensions (Unit : mm)
Silicon N-channel MOSFET
LPTS
10.1
4.5
1.3
Features
1.24
1) Low on-resistance.
2) High current
0.4
2.7
2.54
0.78
3) High power Package
5.08
(1) (2) (3)
Application
Switching
Packaging specifications
Inner circuit
Package
Taping
TL
∗1
Type
Code
Basic ordering unit (pieces)
1000
∗2
RSJ400N06
(1)
(2)
(3)
(1) Gate
(2) Drain
(3) Source
1 ESD PROTECTION DIODE
2 BODY DIODE
Absolute maximum ratings (Ta = 25°C)
Parameter Symbol
Drain-source voltage
Limits
Unit
V
VDSS
VGSS
ID
60
20
Gate-source voltage
V
Continuous
Pulsed
40
A
Drain current
*1
IDP
80
A
Continuous
Pulsed
IS
40
A
Source current
(Body Diode)
*1
*2
ISP
80
A
Power dissipation
PD
50
W
C
C
Channel temperature
Tch
Tstg
150
Range of storage temperature
55to150
*1 Pw10s, Duty cycle1%
*2 T =25C
c
Thermal resistance
Parameter
Symbol
Rth (ch-c)
Limits
2.5
Unit
*
Channel to Case
C / W
* T =25C
c
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2011.09 - Rev.A
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