Datasheet > RSJ400N06FRA

RSJ400N06FRA

更新时间： 2023-09-03 20:25:22

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
8页	1301K
描述
车载MOSFET与通用品共用数据表。下订单时，请注意下列型号命名方式，编写为车载型号。

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RSJ400N06FRA 数据手册

Data Sheet

AEC-Q101 Qualified

10V Drive Nch MOSFET

RSJ400N06

RSJ400N06FRA

 Structure

 Dimensions (Unit : mm)

Silicon N-channel MOSFET

LPTS

10.1

4.5

1.3

Features

1.24

1) Low on-resistance.

2) High current

0.4

2.7

2.54

0.78

3) High power Package

5.08

(1) (2) (3)

 Application

Switching

 Packaging specifications

 Inner circuit

Package

Taping

∗1

Type

Code

Basic ordering unit (pieces)

1000



∗2

RSJ400N06FRA

RSJ400N06

(1)

(2)

(3)

(1) Gate

(2) Drain

(3) Source

1 ESD PROTECTION DIODE

2 BODY DIODE

Absolute maximum ratings (T_a= 25°C)

Parameter Symbol

Drain-source voltage

Limits

Unit

V_DSS

V_GSS

I_D

20

Gate-source voltage

Continuous

Pulsed

40

Drain current

I_DP

80

Continuous

Pulsed

I_S

Source current

(Body Diode)

I_SP

Power dissipation

P_D

C

Channel temperature

Tch

Tstg

150

Range of storage temperature

55to150

*1 Pw10s, Duty cycle1%

*2 T =25C

 Thermal resistance

Parameter

Symbol

R_{th (ch-c)}

Limits

2.5

Unit

Channel to Case

C / W

* T =25C

www.rohm.com

2011.09 - Rev.A

1/5

12 3 4 5 6 7 8

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