Datasheet > RS3ABF

RS3ABF

更新时间： 2024-11-19 01:24:35

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海德 - HDSEMI		/
页数	文件大小	规格书
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描述
SMBF Plastic-Encapsulate Diodes

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中文翻译

获取价格

数据手册

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RS3ABF 数据手册

RS3ABF THRU RS3MBF

HD BF80

SMBF Plastic-Encapsulate Diodes

Fast Recovery Rectifier Diode

Features

●I

50V-1000V

●High surge current capability

SMBF

●VRRM

Glass passivated chip

●

Polarity: Color band denotes cathode

Applications

●Rectifier

Marking

● RS3ABF-RS3MBF : RS3AB-RS3MB

RS3

ABF BBF DBF GBF JBF KBF MBF

Item

Symbol

Unit

Test Conditions

Repetitive Peak Reverse Voltage

V_RRM

100 200 400 600 800 1000

Maximum RMS Voltage

140 280 420 560

700

RMS

60HZ Half-sine wave, Resistance

load, T_L=110℃

Average Forward Current

I_F(AV)

Surge(Non-repetitive)Forward

Current

60Hz Half-sine wave ,1 cycle ,

Ta =25℃

I_FSM

100

Junction Temperature

Storage Temperature

T_J

℃

-55~+150

T_STG

-55 ~ +150

Electrical Characteristics (T =25℃ Unless otherwise specified）

RS3

Item

Symbol

Test Condition

I_F=3.0A

Unit

ABF BBF DBF GBF JBF KBF MBF

V_F

t_rr

1.3

Peak Forward Voltage

Maximum reverse recovery

time

I_F=0.5A,I_R=1.0A,I_rr=0.25A

150

250

500

I_RRM1

I_RRM2

T =25℃

2.5

μA

V_RM=V_RRM

Peak Reverse Current

T =125℃

200

R_θ

Between junction and ambient

Between junction and terminal

J-A

Thermal

Resistance(Typical)

℃/W

R_θ

J-L

Notes:

Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper

pad areas

igh Diode Semiconductor

12 3 4

中文翻译

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