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RS3AHE3_A/I

更新时间： 2024-11-18 22:55:59
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 90K
描述
DIODE GEN PURP 50V 3A DO214AB

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中文翻译

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RS3AHE3_A/I 数据手册

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RS3A, RS3B, RS3D, RS3G, RS3J, RS3K  
www.vishay.com  
Vishay General Semiconductor  
Surface-Mount Fast Switching Rectifier  
FEATURES  
Available  
• Low profile package  
• Ideal for automated placement  
• Glass passivated pellet chip junction  
• Fast switching for high efficiency  
• High forward surge capability  
• Meets MSL level 1, per J-STD-020,  
LF maximum peak of 260 °C  
• AEC-Q101 qualified available  
- Automotive ordering code: base P/NHE3 or P/NHM3  
SMC (DO-214AB)  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
Cathode  
Anode  
ADDITIONAL RESOURCES  
TYPICAL APPLICATIONS  
3
D
3
For use in fast switching rectification of power supply,  
inverters, converters, and freewheeling diodes for  
consumer, automotive and telecommunication.  
D
3D Models  
MECHANICAL DATA  
PRIMARY CHARACTERISTICS  
IF(AV)  
3.0 A  
Case: SMC (DO-214AB)  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
Base P/N-M3 - halogen-free, RoHS-compliant, commercial  
grade  
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified  
Base P/NHM3_X - halogen-free, RoHS-compliant and  
AEC-Q101 qualified  
VRRM  
50 V, 100 V, 200 V, 400 V, 600 V, 800 V  
IFSM  
100 A  
150 ns, 250 ns, 500 ns  
1.3 V  
trr  
VF  
TJ max.  
150 °C  
Package  
SMC (DO-214AB)  
Single  
Circuit configuration  
(“_X” denotes revision code e.g. A, B, .....)  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3, M3, HE3 and HM3 suffix meets JESD 201 class 2  
whisker test  
Polarity: color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL RS3A  
RS3B  
RB  
RS3D  
RD  
RS3G  
RG  
RS3J  
RJ  
RS3K  
RK  
UNIT  
Device marking code  
RA  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
500  
800  
V
V
V
A
Maximum DC blocking voltage  
Maximum average forward rectified current at TL = 75 °C  
100  
IF(AV)  
3.0  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
100  
A
Operating junction and storage temperature range  
TJ, TSTG  
-55 to +150  
°C  
Revision: 25-Feb-2020  
Document Number: 88709  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234

中文翻译

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RS3AHE3_A/I 替代型号

型号 品牌 替代类型 描述 数据表
RS3AHE3/9AT VISHAY

完全替代

 DIODE GEN PURP 50V 3A DO214AB

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