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RS3AHE3_A/H PDF预览

RS3AHE3_A/H

更新时间: 2024-11-18 18:52:03
品牌 Logo 应用领域
威世 - VISHAY 功效测试光电二极管
页数 文件大小 规格书
4页 87K
描述
Rectifier Diode, 1 Phase, 1 Element, 3A, 50V V(RRM), Silicon, DO-214AB, SMC, 2 PIN

RS3AHE3_A/H 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active包装说明:R-PDSO-C2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80Factory Lead Time:12 weeks
风险等级:5.03Is Samacsys:N
其他特性:FREE WHEELING DIODE应用:EFFICIENCY
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.3 V
JEDEC-95代码:DO-214ABJESD-30 代码:R-PDSO-C2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:100 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:3 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260参考标准:AEC-Q101
最大重复峰值反向电压:50 V最大反向电流:10 µA
最大反向恢复时间:0.15 µs反向测试电压:50 V
子类别:Rectifier Diodes表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:30
Base Number Matches:1

RS3AHE3_A/H 数据手册

 浏览型号RS3AHE3_A/H的Datasheet PDF文件第2页浏览型号RS3AHE3_A/H的Datasheet PDF文件第3页浏览型号RS3AHE3_A/H的Datasheet PDF文件第4页 
RS3A, RS3B, RS3D, RS3G, RS3J, RS3K  
www.vishay.com  
Vishay General Semiconductor  
Surface Mount Fast Switching Rectifier  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Glass passivated pellet chip junction  
• Fast switching for high efficiency  
• High forward surge capability  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
SMC (DO-214AB)  
• AEC-Q101 qualified  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PRIMARY CHARACTERISTICS  
TYPICAL APPLICATIONS  
IF(AV)  
3.0 A  
For use in fast switching rectification of power supply,  
inverters, converters, and freewheeling diodes for  
consumer, automotive and telecommunication.  
VRRM  
50 V, 100 V, 200 V, 400 V, 600 V, 800 V  
IFSM  
100 A  
150 ns, 250 ns, 500 ns  
1.3 V  
trr  
VF  
MECHANICAL DATA  
TJ max.  
Package  
Diode variation  
150 °C  
Case: SMC (DO-214AB)  
Molding compound meets UL 94 V-0 flammability rating  
SMC (DO-214AB)  
Single  
Base P/N-E3  
-
RoHS-compliant, commercial grade  
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified  
(“_X” denotes revision code e.g. A, B, .....)  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix  
meets JESD 201 class 2 whisker test  
Polarity: color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL RS3A  
RS3B  
RB  
RS3D  
RD  
RS3G  
RG  
RS3J  
RJ  
RS3K  
RK  
UNIT  
Device marking code  
RA  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
500  
800  
V
V
V
A
Maximum DC blocking voltage  
Maximum average forward rectified current at TL = 75 °C  
100  
IF(AV)  
3.0  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
100  
A
Operating junction and storage temperature range  
TJ, TSTG  
-55 to +150  
°C  
Revision: 27-Jul-17  
Document Number: 88709  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

RS3AHE3_A/H 替代型号

型号 品牌 替代类型 描述 数据表
RS3AHE3/57T VISHAY

完全替代

3A, 50V, SILICON, RECTIFIER DIODE, DO-214AB, ROHS COMPLIANT, PLASTIC, SMC, 2 PIN

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