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RS3AF

更新时间: 2024-11-19 01:24:35
品牌 Logo 应用领域
海德 - HDSEMI /
页数 文件大小 规格书
4页 1405K
描述
SMAF Plastic-Encapsulate Diodes

RS3AF 数据手册

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RS3AF THRU RS3MF  
HD AF80  
SMAF Plastic-Encapsulate Diodes  
Features  
I  
3A  
50V-1000V  
High surge current capability  
o
SMAF  
VRRM  
Glass passivated chip  
Polarity: Color band denotes cathode  
Applications  
Rectifier  
Marking  
RS3AF-RS3MF : RS3A-RS3M  
RS3  
AF BF DF GF JF KF  
Item  
Symbol  
Unit  
Test Conditions  
MF  
VRRM  
V
50  
100 200 400 600 800 1000  
Repetitive Peak Reverse Voltage  
V
V
35  
700  
Maximum RMS Voltage  
RMS  
70 140 280 420 560  
60HZ Half-sine wave, Resistance  
load, TL =110  
IAV)  
A
A
3
Average Forward Current  
60Hz Half-sine wave ,1 cycle ,  
Ta =25℃  
Surge(Non-repetitive)Forward  
Current  
IFSM  
100  
TJ  
-55~+150  
Junction Temperature  
Storage Temperature  
TSTG  
-55 ~ +150  
Electrical Characteristics (T =25Unless otherwise specified  
a
RS3  
Item  
Peak Forward Voltage  
Peak Reverse Current  
Symbol  
Unit  
Test Condition  
AF  
BF DF GF JF KF  
MF  
VFM  
IFM=3.0A  
V
1.3  
IRRM1  
IRRM2  
T =25  
10.0  
100  
a
V
RM=VRRM  
μA  
T =125  
a
IF=0.5A IR=1A  
IRR=0.25A  
trr  
ns  
150  
250  
500  
Reverse Recovery time  
551)  
181)  
Rθ  
J-A  
Thermal Resistance(Typical)  
Typical junction capacitance  
Between junction and ambient  
Between junction and terminal  
Cj  
pF  
Notes:  
Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper  
pad areas  
1
H
igh Diode Semiconductor  

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