Datasheet > RQ3E180GN

RQ3E180GN

更新时间： 2024-09-17 11:08:15

品牌	Logo	应用领域
罗姆 - ROHM		晶体管场效应晶体管
页数	文件大小	规格书
12页	1474K
描述
场效应晶体管MOSFET。通过采用微细工艺的“超低导通电阻元件”，为用户提供应用广泛的功率MOSFET。根据用途备有小型、大功率、复合化的丰富产品阵容，可满足多样的市场需求。

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RQ3E180GN 数据手册

RQ3E180GN

ꢀꢀNch 30V 39A Middle Power MOSFET

Datasheet

ꢀꢀ

llOutline

ꢀ

V_DSS

30V

4.3mΩ

±39A

20W

R_DS(on)(Max.)

HSMT8

I_D

P_D

ꢀ

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ

llInner circuit

llFeatures

1) Low on - resistance.

2) High Power Package (HSMT8).

3) Pb-free lead plating ; RoHS compliant.

4) Halogen Free.

llPackaging specifications

Embossed

Tape

Packing

Reel size (mm)

330

llApplication

Tape width (mm)

Type

Switching

Basic ordering unit (pcs)

Taping code

3000

Marking

E180GN

llAbsolute maximum ratings (T = 25°C ,unless otherwise specified)

Parameter

Symbol

V_DSS

Value

Unit

Drain - Source voltage

T_c= 25°C

T_a= 25°C

I_D

±39

Continuous drain current

±18

I_DP

Pulsed drain current

±72

V_GSS

Gate - Source voltage

±20

I_AS

Avalanche current, single pulse

Avalanche energy, single pulse

E_AS

32.4

℃

P_D

Power dissipation

P_D

2.0

T_j

Junction temperature

150

T_stg

Operating junction and storage temperature range

-55 to +150

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www.rohm.com

ꢀ ꢀ

1/10

20160212 - Rev.002

12 3 4 5 6 7...12

中文翻译

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