生命周期: | Lifetime Buy | 包装说明: | IN-LINE, R-PSIP-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.75 |
风险等级: | 5.53 | 其他特性: | BUILT-IN BIAS RESISTOR RATIO IS 1 |
最大集电极电流 (IC): | 0.1 A | 集电极-发射极最大电压: | 50 V |
配置: | SINGLE WITH BUILT-IN RESISTOR | 最小直流电流增益 (hFE): | 50 |
JESD-30 代码: | R-PSIP-T3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 0.3 W |
认证状态: | Not Qualified | 子类别: | BIP General Purpose Small Signal |
表面贴装: | NO | 端子面层: | TIN LEAD |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 200 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
MUN2140T1G | ONSEMI |
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MUN2137T1G | ONSEMI |
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MUN5137DW1T1G | ONSEMI |
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TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-4E1A, 3 PIN, BIP General Purp | |
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Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications | |
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Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications | |
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TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-4E1A, 3 PIN, BIP General Purp | |
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Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications | |
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TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-4E1A, 3 PIN, BIP General Purp | |
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Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications | |
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) |