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RN2202 PDF预览

RN2202

更新时间: 2024-11-10 22:23:43
品牌 Logo 应用领域
东芝 - TOSHIBA 开关驱动
页数 文件大小 规格书
6页 261K
描述
Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

RN2202 技术参数

生命周期:Lifetime Buy包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.53其他特性:BUILT-IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):50
JESD-30 代码:R-PSIP-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
极性/信道类型:PNP最大功率耗散 (Abs):0.3 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:NO端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):200 MHzBase Number Matches:1

RN2202 数据手册

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RN2201~RN2206  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)  
RN2201,RN2202,RN2203  
RN2204,RN2205,RN2206  
Unit: mm  
Switching, Inverter Circuit, Interface Circuit  
And Driver Circuit Applications  
l With built-in bias resistors  
l Simplify circuit design  
l Reduce a quantity of parts and manufacturing process  
l Complementary to RN1201~RN1206  
Equivalent Circuit and Bias Resistor Values  
Type No.  
R1 (k)  
R2 (k)  
RN2201  
RN2202  
RN2203  
RN2204  
RN2205  
RN2206  
4.7  
10  
4.7  
10  
22  
47  
47  
47  
22  
47  
2.2  
4.7  
JEDEC  
EIAJ  
TOSHIBA  
Weight: 0.13g  
2-4E1A  
Maximum Ratings (Ta = 25°C)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
V
50  
50  
V
V
CBO  
CEO  
RN2201~2206  
Collector-emitter voltage  
RN2201~2204  
RN2205, 2206  
10  
Emitter-base voltage  
V
V
EBO  
5  
Collector current  
I
100  
300  
mA  
mW  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
C
RN2201~2206  
T
150  
j
T
55~150  
°C  
stg  
1
2001-06-07  

RN2202 替代型号

型号 品牌 替代类型 描述 数据表
MUN2140T1G ONSEMI

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MUN2137T1G ONSEMI

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MUN5137DW1T1G ONSEMI

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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)