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RN2201(TPE4) PDF预览

RN2201(TPE4)

更新时间: 2024-01-24 06:08:32
品牌 Logo 应用领域
东芝 - TOSHIBA 开关晶体管
页数 文件大小 规格书
6页 439K
描述
TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-4E1A, 3 PIN, BIP General Purpose Small Signal

RN2201(TPE4) 技术参数

生命周期:Obsolete包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.76其他特性:BUILT-IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):30
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):200 MHz
Base Number Matches:1

RN2201(TPE4) 数据手册

 浏览型号RN2201(TPE4)的Datasheet PDF文件第2页浏览型号RN2201(TPE4)的Datasheet PDF文件第3页浏览型号RN2201(TPE4)的Datasheet PDF文件第4页浏览型号RN2201(TPE4)的Datasheet PDF文件第5页浏览型号RN2201(TPE4)的Datasheet PDF文件第6页 
RN2201~RN2206  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)  
RN2201,RN2202,RN2203  
RN2204,RN2205,RN2206  
Unit: mm  
Switching, Inverter Circuit, Interface Circuit  
And Driver Circuit Applications  
z With built-in bias resistors  
z Simplify circuit design  
z Reduce a quantity of parts and manufacturing process  
z Complementary to RN1201~RN1206  
Equivalent Circuit and Bias Resistor Values  
Type No.  
R1 (k)  
R2 (k)  
RN2201  
RN2202  
RN2203  
RN2204  
RN2205  
RN2206  
4.7  
10  
4.7  
10  
22  
47  
47  
47  
22  
47  
2.2  
4.7  
JEDEC  
JEITA  
TOSHIBA  
Weight: 0.13g (typ.)  
2-4E1A  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
V
50  
50  
V
V
CBO  
RN2201~2206  
Collector-emitter voltage  
CEO  
EBO  
RN2201~2204  
RN2205, 2206  
10  
Emitter-base voltage  
V
V
5  
Collector current  
I
100  
300  
mA  
mW  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
C
RN2201~2206  
T
150  
j
T
stg  
55~150  
°C  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
1
2007-11-01  

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