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RMPG06GHE3/73 PDF预览

RMPG06GHE3/73

更新时间: 2024-11-25 22:54:55
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 71K
描述
DIODE GEN PURP 400V 1A MPG06

RMPG06GHE3/73 数据手册

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RMPG06A, RMPG06B, RMPG06D, RMPG06G, RMPG06J, RMPG06K  
www.vishay.com  
Vishay General Semiconductor  
Miniature Fast Switching Plastic Rectifier  
FEATURES  
• Glass passivated pellet chip junction  
• Fast switching for high efficiency  
SUPERECTIFIER®  
• Low leakage current, typical IR less than 0.1 μA  
• High forward surge capability  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
• AEC-Q101 qualified  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
MPG06  
TYPICAL APPLICATIONS  
For use in fast switching rectification of power supply,  
inverters, converters, and freewheeling diodes for  
consumer, automotive, and telecommunication.  
PRIMARY CHARACTERISTICS  
IF(AV)  
1.0 A  
MECHANICAL DATA  
Case: MPG06, molded epoxy over passivated chip  
50 V, 100 V, 200 V, 400 V, 600 V,  
800 V  
VRRM  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified  
(“_X” denotes revision code e.g. A, B, .....)  
IFSM  
40 A  
150 ns, 200 ns, 250 ns  
1.3 V  
trr  
VF  
IR  
5.0 μA  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix  
TJ max.  
Package  
Diode variation  
150 °C  
MPG06  
Single die  
meets JESD 201 class 2 whisker test  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL RMPG06A RMPG06B RMPG06D RMPG06G RMPG06J RMPG06K UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
V
V
V
Maximum DC blocking voltage  
100  
Maximum average forward  
rectified current 0.375" (9.5 mm)  
lead length at TA = 25 °C  
IF(AV)  
1.0  
40  
A
Peak forward surge current 8.3 ms  
single half sine-wave superimposed  
on rated load  
IFSM  
A
Operating junction and  
storage temperature range  
TJ, TSTG  
-55 to +150  
°C  
Revision: 20-Apr-16  
Document Number: 88706  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

RMPG06GHE3/73 替代型号

型号 品牌 替代类型 描述 数据表
RMPG06GHE3_A/73 VISHAY

完全替代

Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon,

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