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RMPG06GHE3_A/54 PDF预览

RMPG06GHE3_A/54

更新时间: 2024-11-25 15:49:47
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
4页 72K
描述
Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon,

RMPG06GHE3_A/54 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ActiveReach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:12 weeks
风险等级:5.6其他特性:FREE WHEELING DIODE
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.3 VJESD-30 代码:O-PALF-W2
JESD-609代码:e3最大非重复峰值正向电流:40 A
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED参考标准:AEC-Q101
最大重复峰值反向电压:400 V最大反向恢复时间:0.15 µs
子类别:Rectifier Diodes表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

RMPG06GHE3_A/54 数据手册

 浏览型号RMPG06GHE3_A/54的Datasheet PDF文件第2页浏览型号RMPG06GHE3_A/54的Datasheet PDF文件第3页浏览型号RMPG06GHE3_A/54的Datasheet PDF文件第4页 
RMPG06A thru RMPG06K  
Vishay General Semiconductor  
www.vishay.com  
Miniature Fast Switching Plastic Rectifier  
FEATURES  
• Glass passivated chip junction  
• Fast switching for high efficiency  
• Low leakage current, typical IR less than 0.1 μA  
• High forward surge capability  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
• AEC-Q101 qualified  
MPG06  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
TYPICAL APPLICATIONS  
For use in fast switching rectification of power supply,  
inverters, converters, and freewheeling diodes for  
consumer, automotive, and telecommunication.  
PRIMARY CHARACTERISTICS  
IF(AV)  
1.0 A  
MECHANICAL DATA  
Case: MPG06, molded epoxy over passivated chip  
Molding compound meets UL 94 V-0 flammability rating  
VRRM  
IFSM  
trr  
50 V to 800 V  
40 A  
150 ns, 200 ns, 250 ns  
1.3 V  
Base P/N-E3  
-
RoHS-compliant, commercial grade  
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified  
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified  
(“_X” denotes revision code e.g. A, B, .....)  
VF  
IR  
5.0 μA  
TJ max.  
150 °C  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix  
meets JESD 201 class 2 whisker test  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL RMPG06A RMPG06B RMPG06D RMPG06G RMPG06J RMPG06K UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
V
V
V
Maximum DC blocking voltage  
100  
Maximum average forward  
rectified current 0.375" (9.5 mm)  
lead length at TA = 25 °C  
IF(AV)  
1.0  
40  
A
Peak forward surge current 8.3 ms  
single half sine-wave superimposed  
on rated load  
IFSM  
A
Operating junction and  
storage temperature range  
TJ, TSTG  
- 55 to + 150  
°C  
Revision: 17-Dec-12  
Document Number: 88706  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

RMPG06GHE3_A/54 替代型号

型号 品牌 替代类型 描述 数据表
RMPG06GHE3/54 VISHAY

完全替代

DIODE GEN PURP 400V 1A MPG06

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