RMPG06K

更新时间： 2024-01-28 13:08:54

品牌	Logo	应用领域
威世 - VISHAY		开关
页数	文件大小	规格书
4页	77K
描述
Miniature Fast Switching Plastic Rectifier

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中文翻译

获取价格

技术参数
数据手册

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RMPG06K 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.82
Base Number Matches：	1

RMPG06K 数据手册

RMPG06A thru RMPG06K

Vishay General Semiconductor

Miniature Fast Switching Plastic Rectifier

FEATURES

• Glass passivated chip junction

• Fast switching for high efficiency

• Low leakage current, typical I_Rless than 0.1 μA

• High forward surge capability

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• AEC-Q101 qualified

MPG06

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in fast switching rectification of power supply,

inverters, converters, and freewheeling diodes for

consumer, automotive and telecommunication.

PRIMARY CHARACTERISTICS

I_F(AV)

1.0 A

MECHANICAL DATA

Case: MPG06, molded epoxy over passivated chip

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS compliant, commercial grade

Base P/NHE3 - RoHS compliant, AEC-Q101 qualified

V_RRM

I_FSM

t_rr

50 V to 800 V

40 A

150 ns, 200 ns, 250 ns

1.3 V

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix

meets JESD 201 class 2 whisker test

V_F

I_R

5.0 μA

T_Jmax.

150 °C

Polarity: Color band denotes cathode end

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL RMPG06A RMPG06B RMPG06D RMPG06G RMPG06J RMPG06K UNIT

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

100

200

140

200

400

280

400

600

420

600

800

560

800

Maximum DC blocking voltage

100

Maximum average forward

rectified current 0.375" (9.5 mm)

lead length at T_A= 25 °C

I_F(AV)

1.0

Peak forward surge current 8.3 ms

single half sine-wave superimposed

on rated load

I_FSM

Operating junction and

storage temperature range

T_J, T_STG

- 55 to + 150

°C

Document Number: 88706

Revision: 01-Feb-11

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

12 3 4

中文翻译

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与RMPG06K相关器件

型号	品牌	获取价格	描述	数据表
RMPG06K-E3/54	VISHAY	获取价格	DIODE GEN PURP 800V 1A MPG06
RMPG06K-E3/73	VISHAY	获取价格	DIODE GPP 1A 800V 250NS MPG06
RMPG06KHE3_A/54	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon,
RMQC4A1818DGBA-302	RENESAS	获取价格	18-Mbit DDR? II SRAM 2-word Burst
RMQC4A1836DGBA-302	RENESAS	获取价格	18-Mbit DDR? II SRAM 2-word Burst
RMQC4A3618DGBA-302	RENESAS	获取价格	36-Mbit DDR? II SRAM 2-word Burst
RMQC4A3636DGBA-302	RENESAS	获取价格	36-Mbit DDR? II SRAM 2-word Burst
RMQCEA3618DGBA-182	RENESAS	获取价格	36-Mbit DDR? II+ SRAM 2-word Burst Architecture (2.5 Cycle Read latency) with ODT
RMQCEA3636DGBA-182	RENESAS	获取价格	36-Mbit DDR? II+ SRAM 2-word Burst Architecture (2.5 Cycle Read latency) with ODT
RMQCHA3618DGBA-222	RENESAS	获取价格	36-Mbit DDR? II+ SRAM 2-word Burst Architecture (2.0 Cycle Read latency)

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