型号 | 品牌 | 获取价格 | 描述 | 数据表 |
RMPG06KHE3_A/54 | VISHAY |
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Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, | |
RMQC4A1818DGBA-302 | RENESAS |
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18-Mbit DDR? II SRAM 2-word Burst | |
RMQC4A1836DGBA-302 | RENESAS |
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18-Mbit DDR? II SRAM 2-word Burst | |
RMQC4A3618DGBA-302 | RENESAS |
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36-Mbit DDR? II SRAM 2-word Burst | |
RMQC4A3636DGBA-302 | RENESAS |
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36-Mbit DDR? II SRAM 2-word Burst | |
RMQCEA3618DGBA-182 | RENESAS |
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36-Mbit DDR? II+ SRAM 2-word Burst Architecture (2.5 Cycle Read latency) with ODT | |
RMQCEA3636DGBA-182 | RENESAS |
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36-Mbit DDR? II+ SRAM 2-word Burst Architecture (2.5 Cycle Read latency) with ODT | |
RMQCHA3618DGBA-222 | RENESAS |
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36-Mbit DDR? II+ SRAM 2-word Burst Architecture (2.0 Cycle Read latency) | |
RMQCHA3636DGBA-222 | RENESAS |
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36-Mbit DDR? II+ SRAM 2-word Burst Architecture (2.0 Cycle Read latency) | |
RMQS2A1818DGBA-332 | RENESAS |
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18-Mbit QDR? II SRAM 2-word Burst |