Datasheet > RMPA0913C

RMPA0913C

更新时间： 2024-10-30 19:55:11

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
7页	483K
描述
RF/Microwave Amplifier, 1 Func

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技术参数
数据手册

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RMPA0913C 技术参数

生命周期：	Obsolete	包装说明：	QFP12,.28SQ,30
Reach Compliance Code：	unknown	风险等级：	5.84
安装特点：	SURFACE MOUNT	功能数量：	1
端子数量：	12	封装主体材料：	PLASTIC/EPOXY
封装等效代码：	QFP12,.28SQ,30	电源：	3.5 V
子类别：	RF/Microwave Amplifiers	表面贴装：	YES
Base Number Matches：	1

RMPA0913C 数据手册

March 2004

RMPA0913C

3.5V AMPS/CDMA Power Amplifier

General Description

Features

The RMPA0913C is a monolithic high efficiency power

amplifier for AMPS/CDMA dual mode applications in the

824 to 849 MHz frequency band. Performance parameters

may be slightly adjusted by “tweaking” off-chip matching

components. The amplifier circuit design is a single ended

configuration that utilizes harmonic tuning for increased

power added efficiency and linearity. The device uses our

Pseudomorphic High Electron Mobility Transistor (pHEMT)

process.

• Positive supply voltage of 3.5V, nominal

• Power Added Efficiency of 55%, typical, at power out of

31.5dBm

• Power Added Efficiency of 38%, typical, for CDMA power

out of 28.5dBm

• Small outline metal based quad plastic package

Absolute Ratings

Symbol

Vd1, Vd2

Parameter

Rating

Units

Positive DC Voltages

Vg1, Vg2

Vdg

Negative DC Voltage

-6

Simultaneous (Vd-Vg)

+12

RF Input Power (from 50Ω source)

Operating Case Temperature (Case)

Storage Temperature Range

Thermal Resistance

+10

dBm

°C

-30 to 110

-35 to 110

°C

STG

°C/W

J-C

RMPA0913C Rev. B

12 3 4 5 6 7

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