Datasheet > RMP10N80T2

RMP10N80T2

更新时间： 2024-10-15 18:04:51

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
8页	553K
描述
Vdss (V) : 800 V;Id @ 25C (A) : 10.0 A;Rds-on (typ) (mOhms) : 700 mOhms;Total Gate Charge (nQ) typ : 59 nQ;Maximum Power Dissipation (W) : 80 W;Input Capacitance (Ciss) : 2260 pF;Polarity : N-Channel;Mounting Style : Through Hole;Package / Case : TO-220

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RMP10N80T2 数据手册

RMP10N80LD

/IP/TI/T2

N-CHANNEL ENHANCEMENT MODE MOSFET

RMP10N80 is an N-channel enhancement mode MOSFET,which uses the self-aligned

planar process and improved terminal technology,reducing the conduction loss,

enhancing the avalanche energy.

800

1.0

FEATURES

• Low Crss

• Low gate charge

• Fast switching

• Improved ESD capability

• Improved dv/dt capability

• 100% avalanche energy test

APPLICATIONS

• High efficiency swith mode power supplies

• Electronic lamp ballasts

• UPS

10N80

RMP10N80IP

RMP10N80LD

RMP10N80TI

TO-251

TO-252

TO-220F

TO-220

RMP10N80

2020-12/105

REV:O

12 3 4 5 6 7 8

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型号	品牌	获取价格	描述	数据表
RMP10N80TI	RECTRON	获取价格	Vdss (V) : 800 V;Id @ 25C (A) : 10.0 A;Rds-on (typ) (mOhms) : 700 mOhms;Total Gate Charge
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RMP12N60T2	RECTRON	获取价格	Vdss (V) : 600 V;Id @ 25C (A) : 12.0 A;Rds-on (typ) (mOhms) : 520 mOhms;Total Gate Charge
RMP12N60TI	RECTRON	获取价格	Vdss (V) : 600 V;Id @ 25C (A) : 12.0 A;Rds-on (typ) (mOhms) : 520 mOhms;Total Gate Charge
RMP12N65IP	RECTRON	获取价格	Vdss (V) : 650 V;Id @ 25C (A) : 12.0 A;Rds-on (typ) (mOhms) : 650 mOhms;Total Gate Charge
RMP12N65LD	RECTRON	获取价格	Vdss (V) : 650 V;Id @ 25C (A) : 12.0 A;Rds-on (typ) (mOhms) : 650 mOhms;Total Gate Charge
RMP12N65T2	RECTRON	获取价格	Vdss (V) : 650 V;Id @ 25C (A) : 12.0 A;Rds-on (typ) (mOhms) : 650 mOhms;Total Gate Charge
RMP12N65TI	RECTRON	获取价格	Vdss (V) : 650 V;Id @ 25C (A) : 12.0 A;Rds-on (typ) (mOhms) : 650 mOhms;Total Gate Charge
RMP1908	HAMMOND	获取价格	DATA SUBJECT TO CHANGE WITHOUT NOTLCE