Datasheet > RM95N120T2

RM95N120T2

更新时间： 2024-11-19 18:09:47

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
4页	176K
描述
Vdss (V) : 120 V;Id @ 25C (A) : 95 A;Rds-on (typ) (mOhms) : 6.0 mOhms;Total Gate Charge (nQ) typ : 38 nQ;Vgs(th) (typ) : 3.0 V;Input Capacitance (Ciss) : 3382 pF;Polarity : N-Channel;Mounting Style : Through Hole;Package / Case : TO-220

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RM95N120T2 数据手册

RM95N120T2

N-Channel Super Trench Power MOSFET

Description

The RM95N120T2 uses Super Trench technology that is

uniquely optimized to provide the most efficient high

frequency switching performance. Both conduction and

switching power losses are minimized due to an extremely

low combination of R_DS(ON)and Q_g. This device is ideal for

high-frequency switching and synchronous rectification.

Schematic diagram

General Features

V_DS=120V,I_D=95A

R_DS(ON)=6 mΩ(typical) @ V _GS=10V

Excellent gate charge x R_DS(on)product(FOM)

Very low on-resistance R_DS(on)

Pb-free lead plating

100% UIS tested

TO-220-3L top view

Application

DC/DC Converter

rectification

Ideal for high-frequency switching and synchronous

Halogen-free

P/N suffix V means AEC-Q101 qualified, e.g:RM95N120T2V

100% UIS TESTED!

100% ∆Vds TESTED!

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

95N120

RM95N120T2

TO-220-3L

Absolute Maximum Ratings (T_C=25 unless otherwise noted)

Parameter

Symbol

V^DS

Limit

120

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^GS

I_D

Drain Current-Continuous(T_C=100

Pulsed Drain Current

)

I_D(100

)

320

I_DM

E_AS

Single pulse avalanche energy^{(Note 5)}

500

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

2019-05/69

REV:O

12 3 4

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