Datasheet > RM95N65T2

RM95N65T2

更新时间： 2024-10-15 18:09:31

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	401K
描述
Vdss (V) : 65 V;Id @ 25C (A) : 95 A;Rds-on (typ) (mOhms) : 4.5 mOhms;Total Gate Charge (nQ) typ : 34.7 nQ;Maximum Power Dissipation (W) : 122 W;Input Capacitance (Ciss) : 1910 pF;Polarity : N-Channel;Mounting Style : Through Hole;Package / Case : TO-220

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RM95N65T2 数据手册

RM95N65T2

N-Channel Enhancement Mode Power MOSFET

Description

The RM95N65T2 uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

General Feature

V_DS=65V,I_D=95A

Schematic diagram

R_DS(ON)< 5.5mΩ @ V_GS=10V

Special process technology for high ESD capability

High density cell design for ultra low Rdson

Fully characterized Avalanche voltage and current

Good stability and uniformity with high E_AS

Excellent package for good heat dissipation

Application

Power switching application

Hard switched and high frequency circuits

Uninterruptible power supply

Halogen-free

D S

TO-220-3L top view

100% UIS TESTED!

100% ∆Vds TESTED!

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

95N65

RM95N65T2

TO-220-3L

Absolute Maximum Ratings (T_C=25 unless otherwise noted)

Parameter

Symbol

V^DS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

VGS

I_D

Drain Current-Continuous(T_C=100

Pulsed Drain Current

)

I_D(100

I_DM

)

2019-10/57

REV:O

380

12 3 4 5 6 7

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