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RM9P30D2V PDF预览

RM9P30D2V

更新时间: 2024-11-19 18:09:31
品牌 Logo 应用领域
RECTRON
页数 文件大小 规格书
7页 1903K
描述
Vdss (V) : 30 V;Id @ 25C (A) : 9.1 A;Rds-on (typ) (mOhms) : 16 mOhms;Total Gate Charge (nQ) typ :

RM9P30D2V 数据手册

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RM9P30D2V  
P-ChannelEnhancement Mode Power MOSFET  
D
Description  
The RM9P30D2V uses advanced trench technology to provide  
excellent RDS(ON), low gate charge and operation with gate  
voltages as low as 4.5V.  
G
S
General Features  
VDS = -30V,ID = -9.1A  
Schematic diagram  
RDS(ON) < 35mΩ @ VGS=-4.5V  
RDS(ON) < 20mΩ @ VGS=-10V  
High power and current handing capability  
Lead free product is acquired  
Surface mount package  
Pin Out  
Bottom View  
Application  
Battery Switch  
Load switch  
Power management  
Halogen-free  
P/N suffix V means AEC-Q101 qualified, e.g:RM9P30D2V  
Package Marking and Ordering Information  
Device Marking  
Device  
Device Package  
Reel Size  
Tape width  
Quantity  
RM9P30D2V  
-
9P30  
DFN2X2-6L  
4000pcs/reel  
7inch  
Absolute Maximum Ratings (TA=25 unless otherwise noted)  
Parameter Symbol  
Limit  
-30  
Unit  
V
Drain-Source Voltage  
VDS  
Gate-Source Voltage  
20  
V
VGS  
TA =25  
TA =70  
-9.1  
Continuous Drain Current (TJ =150  
)
A
ID  
-7.2  
Drain Current-Pulsed (Note 1)  
Maximum Power Dissipation  
-50  
A
IDM  
PD  
2.1  
W
Operating Junction and Storage Temperature Range  
-55 To 150  
TJ,TSTG  
Thermal Characteristic  
Thermal Resistance,Junction-to-Ambient (Note 2)  
RθJA  
60  
/W  
2023 -12/15  
REV:  
O

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