Datasheet > RM9926

RM9926

更新时间： 2024-11-19 18:09:47

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	202K
描述
Vdss (V) : 20 V;Id @ 25C (A) : 6.0 A;Rds-on (typ) (mOhms) : 20 mOhms;Total Gate Charge (nQ) typ : 10 nQ;Maximum Power Dissipation (W) : 1.25 W;Vgs(th) (typ) : 0.75 V;Input Capacitance (Ciss) : 640 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : SOP-8

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RM9926 数据手册

RM9926

N-Channel Enhancement Mode Power MOSFET

Description

The RM9926 uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

Schematic diagram

General Features

ƽ V_DS=20V,I_D=6A

R_DS(ON)< 28mΩ @ V_GS=4.5V

R_DS(ON)< 37mΩ @ V_GS=2.5V

ƽ High density cell design for ultra low Rdson

ƽ Fully characterized avalanche voltage and current

Application

Marking and pin Assignment

ƽ Power switching application

ƽ Hard switched and high frequency circuits

ƽ Uninterruptible power supply

SOP-8 top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

2500 units

9926

RM9926

SOP-8

Ø330mm

12mm

Absolute Maximum Ratings (T_A=25ćunless otherwise noted)

Parameter

Symbol

V^DS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^GS

I_D

Drain Current-Continuous(T_C=100ć)

Pulsed Drain Current

I_D(100ć)

3.8

I_DM

Maximum Power Dissipation

1.25

P_D

T_J,T_STG

Operating Junction and Storage Temperature Range

-55 To 150

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient^{(Note 2)}

R_θJA

100

ć/W

2016-10

REV:O15

12 3 4 5 6 7

中文翻译

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