Datasheet > RM5N700LD

RM5N700LD

更新时间： 2024-10-31 01:19:31

品牌	Logo	应用领域
RECTRON		/
页数	文件大小	规格书
8页	974K
描述
N-Channel Super Junction Power MOSFET

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中文翻译

获取价格

数据手册

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RM5N700LD 数据手册

RM5N700IP

RM5N700LD

N-Channel Super Junction Power MOSFET Ċ

General Description

The series of devices use advanced super junction

technology and design to provide excellent R^DS(ON)with low

gate charge. This super junction MOSFET fits the industry’s

AC-DC SMPS requirements for PFC, AC/DC power

conversion, and industrial power applications.

V_DS

R_DS(ON)TYP.

I_D

700

840

mΩ

Features

ƽNew technology for high voltage device

ƽLow on-resistance and low conduction losses

ƽSmall package

ƽUltra Low Gate Charge cause lower driving requirements

ƽ100% Avalanche Tested

ƽROHS compliant

Application

ƽꢀ Power factor correction˄PFC˅

ƽꢀ Switched mode power supplies(SMPS)

ƽꢀ Uninterruptible Power Supply˄UPS˅

Schematic diagram

Package Marking And Ordering Information

Device

Device Package

Marking

RM5N700IP

RM5N700LD

TO-251

5N700

TO-252

TO-251

TO-252

Table 1. Absolute Maximum Ratings (T_C=25ć)

Parameter

Symbol

VDS

Value

Unit

700

f30

Drain-Source Voltage (VGS=0V˅

Gate-Source Voltage (VDS=0V)

VGS

Continuous Drain Current at Tc=25°C

I_{D (DC)}

Continuous Drain Current at Tc=100°C

I_{D (DC)}

(Note 1)

I_{DM (pluse)}

Pulsed drain current

Drain Source voltage slope, VDS = 480 V, ID = 5 A, Tj =

dv/dt

P_D

V/ns

125 °C

Maximum Power Dissipation(Tc=25ć)

Derate above 25°C

Single pulse avalanche energy ^(Note2)

Avalanche current^{(Note 1)}

0.39

135

2.5

W/°C

EAS

I_AR

2017-02

REV:O15

12 3 4 5 6 7 8

中文翻译

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