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RM5P60S8 PDF预览

RM5P60S8

更新时间: 2024-11-18 18:09:15
品牌 Logo 应用领域
RECTRON
页数 文件大小 规格书
7页 170K
描述
Vdss (V) : 60 V;Id @ 25C (A) : 5.0 A;Rds-on (typ) (mOhms) : 53 mOhms;Total Gate Charge (nQ) typ : 25 nQ;Maximum Power Dissipation (W) : 2.0 W;Input Capacitance (Ciss) : 1480 pF;Polarity : P-Channel;Mounting Style : SMD/SMT;Package / Case : SOP-8

RM5P60S8 数据手册

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RM5P60S8  
P-Channel Enhancement Mode MOSFET  
Simplified Outline  
Symbol  
Features  
Surface-mounted package  
Low gate charge  
8
7
6
5
Applications  
Motor driver appliances  
Adapter appliances  
High power inverter system  
1
2
3
4
Quick reference  
SOP8 Top View  
BV  
Ptot  
ID  
-60 V  
2 W  
-5 A  
ฺ  
Pin  
1,2,3  
4
De
scription  
Source  
Gate  
Drain  
RDS(ON) ʆ 60mΩ @ VGS = -10 V  
5,6,7,8  
RDS(ON) ʆ 85mΩ @ VGS = -4.5 V  
Halogen-free  
Package Marking and Ordering Information  
Device Marking  
Device  
Device Package  
Reel Size  
---  
Tape width  
---  
Quantity  
RM5P60S8  
---  
SOP-8  
6005  
Absolute Maximum Ratings (TA=25 unless otherwise noted)  
D
Min Max Unit  
Symbol  
VDS  
Parameter  
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current  
Conditions  
-60  
-
-
V
V
A
TA = 25 ȭ  
TC = 25 ȭ  
VGS  
20  
G
ID*  
-
-
-
-
-5  
TA = 25 ȭ, VGS = -10 V  
TA = 100 ȭ, VGS = -10 V  
ID*  
Drain Current  
-2.9  
-18  
2
A
Sꢀ  
ꢀ ꢀ ꢀ ꢀ  
IDM*,**  
Ptot*  
Tstg  
Drain Current ( Pulsed )  
Total Power Dissipation  
Storage Temperature  
Junction Temperature  
A
W
TA = 25 ȭ, VGS = -10 V  
TA = 25 ȭ  
- 55 150  
ȭ
TJ  
-
-
-
150  
62.5  
3.5  
ȭ
RθJA  
*
*
Thermal Resistance-Junction to Ambient  
Thermal Resistance-Junction to Case  
ȭ/W  
ȭ/W  
RθJC  
Surface Mounted on 1 in2 pad area, t 10 sec  
Pulse width 300 s, duty cycle 2 %  
Notes:  
*
2022-11/113  
REV:O  
**  
*** Limited by bonding wire  

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