Datasheet > RM5N800LD

RM5N800LD

更新时间： 2024-10-31 01:19:31

品牌	Logo	应用领域
RECTRON		/
页数	文件大小	规格书
8页	500K
描述
N-Channel Super Junction Power MOSFET

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中文翻译

获取价格

数据手册

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RM5N800LD 数据手册

RM5N800IP

RM5N800LD

N-Channel Super Junction Power MOSFETꢀꢀĊ

General Description

The series of devices use advanced super junction

V_DS

800

1000

mΩ

technology and design to provide excellent R^DS(ON)with low

gate charge. This super junction MOSFET fits the industry’s

AC-DC SMPS requirements for PFC, AC/DC power

conversion, and industrial power applications.

R_{DS(ON) TYP}

I_D

Features

ƽNew technology for high voltage device

ƽLow on-resistance and low conduction losses

ƽSmall package

ƽUltra Low Gate Charge cause lower driving requirements

ƽ100% Avalanche Tested

ƽROHS compliant

Application

ƽꢀ Power factor correction˄PFC˅

ƽꢀ Switched mode power supplies(SMPS)

ƽꢀ Uninterruptible Power Supply˄UPS˅

Schematic diagram

Package Marking And Ordering Information

Device

Device Package

Marking

5N800

TO-251

RM5N800IP

RM5N800LD

TO-252

TO-251

TO-252

Table 1. Absolute Maximum Ratings (T_C=25ć)

Parameter

Symbol

Value

Unit

800

f30

Drain-Source Voltage (

GS 0V˅

VDS

Gate-Source Voltage (

DS 0V)

VGS

Continuous Drain Current at Tc=25°C

I_{D (DC)}

I_{DM (pluse)}

P_D

Continuous Drain Current at Tc=100°C

(Note 1)

Pulsed drain current

Maximum Power Dissipation(Tc=25ć)

Derate above 25°C

0.65

W/°C

Single pulse avalanche energy ^{(Note 2)}

Avalanche current^{(Note 1)}

2.5

I_AR

Repetitive Avalanche energy ˈt_ARlimited by T_jmax

0.4

E_AR

(Note 1)

2016-09

REV:O15

12 3 4 5 6 7 8

中文翻译

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