Datasheet > RM10N100S8

RM10N100S8

更新时间： 2024-06-27 12:11:56

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	398K
描述
Vdss (V) : 100 V;Id @ 25C (A) : 10.0 A;Rds-on (typ) (mOhms) : 12 mOhms;Total Gate Charge (nQ) typ : 27.8 nQ;Maximum Power Dissipation (W) : 3.1 W;Vgs(th) (typ) : 1.5 V;Input Capacitance (Ciss) : 1640 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : SOP-8

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RM10N100S8 数据手册

RM10N100S8

N-Channel Enhancement Mode Power MOSFET

Description

The RM10N100S8 uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

General Features

V_DS= 100V,I_D=10A

Schematic diagram

Marking and pin assignment

SOP-8 top view

R_DS(ON)< 14mΩ @ V_GS=10V

R_DS(ON)< 21mΩ @ V_GS=4.5V

Special process technology for high ESD capability

High density cell design for ultra low Rdson

Fully characterized avalanche voltage and current

Application

DC/DC Primary Side Switch

Telecom/Server

Synchronous Rectification

Halogen-free

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

RM10N100S8

SOP-8

Ø330mm

12mm

2500 units

10N100

Absolute Maximum Ratings (T_A=25 unless otherwise noted)

Parameter

Symbol

V^DS

Limit

100

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

VGS

I_D

I_D(100

Drain Current-Continuous(T_C=100

Pulsed Drain Current

)

3.1

I_DM

P_D

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient^{(Note 2)}

R_θJA

2019-02/15

REV:A

12 3 4 5 6 7

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